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2SB1383 参数 Datasheet PDF下载

2SB1383图片预览
型号: 2SB1383
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(斩波稳压器, DC电机驱动器和通用) [Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)]
分类和应用: 晶体驱动器稳压器晶体管功率双极晶体管开关电机局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(2 k
Ω)
(80Ω) E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1383
–120
–120
–6
–25(
Pulse
–40)
–2
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1383
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–25mA
V
CE
=–4V, I
C
=–12A
I
C
=–12A, I
B
=–24mA
I
C
=–12A, I
B
=–24mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
(Ta=25°C)
2SB1383
–10
max
–10
max
–120
min
2000
min
–1.8
max
–2.5
max
50
typ
230
typ
V
MHz
pF
5.45
±0.1
B
C
E
20.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2083)
Application :
Chopper Regulator, DC Motor Driver and General Purpose
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
mA
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–24
R
L
(Ω)
2
I
C
(A)
–12
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–24
I
B2
(mA)
24
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.0typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
(V )
–25
–8
.0
mA
– 6 .0 m A
V
CE
( sat ) – I
B
Characteristics
(Typical)
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
– 25
( V
CE
=– 4 V )
C ol l e c t o r C ur r e nt I
C
( A)
–4 .0 m A
–2
I
C
= – 25 A
C ol l e c t o r C ur r e nt I
C
( A )
–20
– 20
–15
– 15
mp
Te
)
–2.5 mA
em
eT
–30
˚C (
p)
Cas
– 6A
–1.0mA
–5
–5
I
B
=–0.6mA
0
0
–1
–2
–3
–4
–5
–6
0
– 0 .5 –1
–10
Ba se Cu r r e nt I
B
( m A)
–100
–500
0
0
–1
12
5˚C
–1
25˚
C(
Cas
–2
eT
–10
– 12 A
–1.5mA
– 10
(Ca
se
emp
)
– 2 .6
C ol l ec t or - Emi t t er Vo l t ag e V
C E
(V )
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= – 4 V)
20000
D C C ur r e n t Gai n h
F E
10000
20000
D C C ur r e n t Gai n h
F E
10000
5000
12
5˚C
2
5˚C
( V
C E
= – 4V )
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
2
Typ
5000
1
0.5
–30
˚C
1000
500
200
–0.2
1000
500
200
–0.2
–0. 5
–1
–5
– 10
–40
–0.5
–1
–5
–1 0
– 40
0.1
1
10
Time t(ms)
10 0
1 00 0
C o ll e ct o r C urr en t I
C
(A )
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=–1 2 V)
60
–100
Safe Operating Area
(Single Pulse)
120
Pc – Ta Derating
50
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
1m
Ma x im um P ow e r D i s s i p a t i o n P
C
( W )
Typ
–50
100
W
ith
10
Co lle cto r C u r r e nt I
C
( A )
s
m
40
–10
–5
DC
In
s
fin
ite
he
30
at
si
nk
50
20
–1
– 0 .5
Without Heatsink
Natural Cooling
10
0
0.1
0.5
1
5
10
– 0 .2
–3
–5
– 10
– 50
– 1 00
–2 00
3.5
0
W i t ho u t H ea t s i nk
0
25
50
75
1 00
125
15 0
Emi t t e r Cu rre nt I
E
(A)
Co ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( ˚ C )
44