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2SB1420 参数 Datasheet PDF下载

2SB1420图片预览
型号: 2SB1420
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(斩波稳压器, DC电机驱动器和通用) [Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, DC Motor Driver and General Purpose)]
分类和应用: 晶体驱动器稳压器晶体管电机
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(2 k
Ω)
(80Ω) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1420
–120
–120
–6
–16(
Pulse
–26)
–1
80(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1420
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–10mA
V
CE
=–4V, I
C
=–8A
I
C
=–8A, I
B
=–16mA
I
C
=–8A, I
B
=–16mA
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
2SB1420
–10
max
–10
max
–120
min
2000
min
–1.5
max
–2.5
max
50
typ
350
typ
V
MHz
pF
20.0min
4.0max
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
Application :
Chopper Regulator, DC Motor Driver and General Purpose
(Ta=25°C)
Unit
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
µ
A
mA
19.9
±0.3
4.0
V
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–24
R
L
(Ω)
2
I
C
(A)
–12
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–24
I
B2
(mA)
24
t
on
(
µ
s)
1.0typ
t
stg
(
µ
s)
3.0typ
t
f
(
µ
s)
1.0typ
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
Co l l e c t o r - E m i t t e r Sa t u r a t i o n V o l t a ge V
C E(s at)
( V )
–26
–2
V
CE
( sa t) – I
B
Characteristics
(Typical)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–16
( V
CE
=– 4 V )
–4
0m
0m
A
A
–12m
A
–20
C o l l e c t o r Cu r r e n t I
C
( A )
–6 m A
C ol l e c t o r C ur r en t I
C
( A )
–12
–2
I
C
= – 16 A
Tem
mp)
se T
e
(Ca
–30˚
C (C
(Ca
se
–8
˚C
–10
I
B
=–1. 5mA
– 8A
–1
–4A
125
–4
0
0
–1
–2
–3
–4
–5
–6
0
–0.5
–1
–10
Ba s e Cu r r en t I
B
( m A)
–100
0
0
–1
B as e- Em i t t or V o l t a g e V
B E
( V)
25˚C
ase
T
emp
)
–3 mA
p)
–2
– 2. 4
Col l e ct o r- Em i tte r V ol ta ge V
C E
( V)
(V
C E
= – 4 V)
20000
DC C ur r e n t Gai n h
F E
10000
DC C ur r e n t Gai n h
F E
20000
10000
( V
C E
= – 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
5000
12
5000
5˚C
25
˚C
0˚C
1
–3
0.5
1000
500
–0.3
1000
500
–0.3
–1
–5
–10
–16
–0.5
–1
–5
–1 0
–1 6
0.2
1
10
Time t(ms)
10 0
1000
C ol l e ct o r C u rre nt I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
100
(V
C E
= – 1 2 V )
–50
Safe Operating Area
(Single Pulse)
80
1m
m
s
10
0
µ
Pc – Ta Derating
Typ
Cu t- off Fr eq u e n c y f
T
( MH
Z
)
–10
Co lle cto r C u r re n t I
C
( A )
–5
DC
M ax im um P ow er Di s s i p a t i on P
C
( W )
10
s
s
60
W
ith
In
fin
ite
he
50
–1
–0.5
Without Heatsink
Natural Cooling
40
at
si
nk
20
–0.1
–0.05
–0.03
–3
W i t ho u t H ea t s i nk
–5
–1 0
–5 0
– 10 0
– 2 00
3.5
0
0
25
50
75
1 00
12 5
150
0
0.05 0.1
0.5
1
5
10
16
Em i t t er Cu rre nt I
E
(A )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
A m bi en t T e m p e r a t ur e T a ( ˚ C )
45