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2SB1625 参数 Datasheet PDF下载

2SB1625图片预览
型号: 2SB1625
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频,系列稳压器和通用) [Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)]
分类和应用: 晶体稳压器晶体管功率双极晶体管开关局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
( 7 0
Ω)
E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1625
–110
–110
–5
–6
–1
60(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1625
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
2SB1625
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
–100
typ
–110
typ
V
V
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2494)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3P)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
3.35
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
m
–1
V
CE
( sa t) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
–3
I
C
– V
BE
Temperature Characteristics
(Typical)
–6
( V
CE
=– 4 V )
–6
A
–5m
–0
.5
m
A
–0
.4
mA
– 0 .3 m A
–5
C o l l e c to r C u r r e n t I
C
( A )
C o l l e c t o r Cu r r e n t I
C
( A )
–0 .2 mA
–4
–2
– 5A
–4
–3
p)
se T
emp
˚C (
)
Cas
e Te
mp)
Tem
I
B
=–0 .1m A
I
C
= – 3A
–1
Ca
se
–2
–2
˚C
(
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
–1
–30
–1
25˚C
125
(Ca
–2
3.0
–3
C ol l ec t or - Emi t t er Vo l t ag e V
C E
(V )
Ba se Cu r r e n t I
B
( m A)
B as e- Em i t t o r V o l t a g e V
B E
( V )
(V
C E
= – 4 V)
40,000
DC C ur re n t Gai n h
FE
DC C ur re n t Gai n h
FE
50000
( V
C E
= – 4V )
12 5˚ C
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
10,000
5,000
25 ˚ C
10000
5000
– 30 ˚ C
1,000
500
200
–0.2
1000
500
1
0. 5
1
10
100
Time t(ms)
1 0 0 0 2 0 00
–0.05 – 0. 1
–0 .5
–1
–5 –6
100
–0.02
– 0 . 05 – 0. 1
– 0. 5
–1
–5 –6
C ol l e ct o r C u rre nt I
C
(A )
C o ll e ct o r C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= – 1 2 V )
120
–20
–10
–5
Col lec tor Cu r r e n t I
C
(A )
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
Typ
100
C ut- off Fr e q u e n c y f
T
( M H
Z
)
10
10
0m
s
m
s
M ax im um P o we r Di s s i p a t i o n P
C
( W )
W
ith
80
DC
40
In
fin
ite
he
–1
–0.5
at
60
si
nk
40
20
20
–0.1
Without Heatsink
Natural Cooling
W i t h o u t H e a ts i n k
0
0.02
0.0 5
0. 1
0 .5
1
5 6
–0.05
–5
– 10
–5 0
– 10 0 – 1 5 0
3.5
0
0
25
50
75
100
125
150
Emi t t e r C ur ren t I
E
( A)
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
52