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2SB1626 参数 Datasheet PDF下载

2SB1626图片预览
型号: 2SB1626
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面型晶体管(音频,系列稳压器和通用) [Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)]
分类和应用: 晶体稳压器晶体管功率双极晶体管开关局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(70
) E
Darlington
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1626
–110
–110
–5
–6
–1
30(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
2SB1626
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–110V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–5A
I
C
=–5A, I
B
=–5mA
I
C
=–5A, I
B
=–5mA
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
2SB1626
–100
max
–100
max
–110
min
5000
min
–2.5
max
–3.0
max
100
typ
110
typ
V
V
13.0min
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2495)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
16.9
±0.3
V
8.4
±0.2
µ
A
MHz
pF
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–30
R
L
(Ω)
6
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–5
I
B2
(mA)
5
t
on
(
µ
s)
1.1typ
t
stg
(
µ
s)
3.2typ
t
f
(
µ
s)
1.1typ
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
A
m
–1
V
C E
( sat ) – I
B
Characteristics
(Typical)
Co l l e c t o r - E m i t t e r Sa t u r a t i o n V o lt a ge V
C E(s at)
( V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–6
( V
CE
= – 4 V )
–6
A
–5m
–0
.5
m
A
–0
.4
mA
– 0 .3 m A
C o l l e c t or C u r r e n t I
C
( A )
–0 .2 mA
–4
C o l l e c t o r C u r r e n t I
C
( A)
–2
–5A
–4
–2
–1
–2
0
0
–2
–4
–6
0
–0.1
–0.5 –1
–5 –10
–50 –100
0
0
125
˚C
(Ca
se
Tem
p)
25˚C
(Ca
se T
–30
emp
˚C (
)
Cas
e Te
mp)
I
B
=–0 .1m A
I
C
= – 3A
–1
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
–2
–3
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V)
Bas e C ur r e nt I
B
( m A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= – 4 V)
40,000
DC C ur re nt Ga i n h
FE
DC C ur re nt Ga i n h
FE
50000
( V
C E
= –4 V)
1 25 ˚ C
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5. 0
Typ
10,000
5,000
25 ˚ C
10000
5000
–3 0 ˚ C
1. 0
1,000
500
200
–0.2
1000
500
0. 5
0. 3
–0.05 –0 . 1
– 0. 5
–1
–5 –6
100
– 0 .0 2
– 0 . 0 5 – 0 .1
–0 . 5
–1
–5 –6
1
10
Time t(ms)
100
1000
C ol l ec t or Cu rren t I
C
( A)
Co l le c to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V )
120
–20
–10
100
C ut- off F r e q ue n c y f
T
( M H
Z
)
Safe Operating Area
(Single Pulse)
30
Pc – Ta Derating
Typ
–5
Col lec to r Cu rr e n t I
C
(A )
10
0m
10
s
m
s
M a xim u m P o w e r D i s s i p a t i o n P
C
( W )
W
ith
80
D
C
20
In
fin
ite
he
60
at
–1
–0.5
Without Heatsink
Natural Cooling
–0.1
si
nk
40
10
20
W i th o u t H e a t s i n k
2
0
0
0.02
0.05
0. 1
0 .5
1
5 6
– 0 .0 5
–3
–5
–1 0
– 50
– 1 00
–2 00
0
25
50
75
100
125
150
Emi t t e r C u rren t I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
53