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2SB1649 参数 Datasheet PDF下载

2SB1649图片预览
型号: 2SB1649
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 31 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
(7 0
Ω)
E
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–150
–150
–5
–15
–1
85(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SB1649
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–30mA
V
CE
=–4V, I
C
=–10A
I
C
=–10A, I
B
=–10mA
I
C
=–10A, I
B
=–10mA
V
CE
=–12V, I
E
=2A
V
CB
=–10V, f=1MHz
Ratings
–100
max
–100
max
–150
min
5000
min
–2.5
max
–3.0
max
45
typ
320
typ
V
V
pF
16.2
B
Equivalent circuit
C
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2561)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
MHz
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(mA)
–10
I
B2
(mA)
10
t
on
(
µ
s)
0.7typ
t
stg
(
µ
s)
1.6typ
t
f
(
µ
s)
1.1typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–15
–2
m
A
–1.5mA
V
C E
( sa t) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo l t a g e V
C E(s at)
( V)
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–1 5
( V
CE
=– 4 V )
–50mA
–10mA
–3mA
–1 .0 m A
C ol l e c t o r C u r r e nt I
C
( A )
–0. 8m A
C o l l ec to r C u r r e n t I
C
( A )
–10
–0 .5m A
–2
–1 0
Tem
p)
I
C
=–15 A
I
C
=–1 0A
I
C
= – 5A
mp)
(Ca
I
B
=–0.3m A
˚C
125
25˚C
0
0
–2
–4
–6
0
–0.2
–0.5 –1
–5
–10
–50 –100 –200
0
0
–1
–30
˚C (
Cas
–5
–1
–5
(Ca
s
eT e
mp)
eT e
se
–2
3.0
–3
Co l l ect o r - Emi tt er Vo l t ag e V
C E
(V )
Ba s e Cu r r en t I
B
( m A)
B as e- Em i t t or V o l t a g e V
BE
( V )
50,000
DC C ur r e n t Gai n h
FE
(V
C E
=– 4 V)
50000
DC C ur r e n t Gai n h
FE
12 5˚ C
2 5˚ C
10000
5000
–3 0˚ C
( V
C E
= – 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
1
10,000
5,000
0 .5
1,000
–0.2
– 0. 5
–1
C o ll e ct or Cu rre nt I
C
(A )
–5
–10 –15
1000
–0.2
–0 . 5
–1
Co l l ec to r C ur r en t I
C
( A)
–5
– 10 –1 5
0 .1
1
10
10 0
Time t(ms)
1 0 0 0 2 00 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
60
–50
Safe Operating Area
(Single Pulse)
100
10
0m
s
P c – Ta Derating
s
M ax im um P o wer Di s s i pa t i o n P
C
( W )
10
m
Cu t-o ff Fre q u e n c y f
T
( M H
Z
)
–10
Col lec tor Cu rr en t I
C
( A )
40
–5
DC
80
W
ith
In
60
fin
ite
he
at
–1
–0.5
Without Heatsink
Natural Cooling
si
nk
40
20
20
W i t ho u t He a t s i nk
0
25
50
75
100
125
1 50
–0.1
0
0.02
0. 05 0. 1
0 .5
1
5
10
– 0 .0 5
–3
–5
– 10
–5 0
– 10 0
–200
3.5
0
Em it t er Cu rre nt I
E
(A )
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m p er at u r e T a ( ˚ C )
54