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2SC3284 参数 Datasheet PDF下载

2SC3284图片预览
型号: 2SC3284
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型晶体管(音频和通用) [Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3284
150
150
5
14
3
125(Tc=25°C)
150
–55 to +150
2SC3284
Application :
Audio and General Purpose
(Ta=25°C)
2SC3284
100
max
100
max
150
min
50
min
2.0
max
60
typ
200
typ
V
pF
20.0min
4.0max
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1303)
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
60
R
L
(Ω)
12
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–0.5
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.5typ
t
f
(
µ
s)
0.35typ
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
0m
4
A
00m
300
mA
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l t a g e V
CE( sa t)
(V )
3
I
C
– V
BE
Temperature Characteristics
(Typical)
14
( V
C E
=4 V )
14
A
0m
60
mA
0
50
12
75
A
200m
C ol l e c t o r C ur r en t I
C
( A)
A
C o l l e c t o r C u r r e n t I
C
( A)
150mA
10
2
8
10 0m A
25
˚C
I
B
=20mA
12
5˚C
I
C
= 1 0A
5A
0
0
0
0
1
2
3
4
0
0.2
0 .4
0.6
0 .8
1. 0
0
–30
1
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
˚C
(Ca
se
(C
as
4
eT
1
em
50m A
5
Tem
p)
p)
2
Co l le ct o r -Em i t t er V ol tag e V
C E
(V )
Bas e C ur r en t I
B
( A)
(V
CE
=4 V )
200
D C C u rr en t G ai n h
FE
D C Cu r r en t G a i n h
FE
200
12 5 ˚ C
100
100
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
25 ˚ C
– 30 ˚ C
1
0.5
50
50
20
0.02
0.1
0.5
1
5
10 14
20
0.02
0 .1
0 .5
1
5
10 14
0.1
1
10
100
Time t(ms)
10 0 0 2 00 0
Co l l ect o r C u rren t I
C
( A)
C o ll e ct o r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=1 2 V )
80
40
Safe Operating Area
(Single Pulse)
1 30
1m
10
Pc – Ta Derating
s
Cut- off Fr eq u e n c y f
T
( M H
Z
)
Typ
60
Co lle cto r Cu r re n t I
C
( A )
10
5
10
s
0m
Ma x imu m Po we r D i s s i p a t i o n P
C
(W )
m
D
s
1 00
W
ith
C
In
fin
ite
he
40
at
si
nk
50
1
0 .5
Without Heatsink
Natural Cooling
20
0
–0. 02
– 0. 1
–1
–10
0 .2
3
10
1 00
2 00
Em i t t er C urre nt I
E
(A )
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
3. 5
0
W i t ho u t He a t s i nk
0
25
50
75
100
125
150
Am b i e n t T e m p er at u r e T a ( ˚ C )
65