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2SC3519 参数 Datasheet PDF下载

2SC3519图片预览
型号: 2SC3519
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型晶体管(音频和通用) [Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
2SC3519/3519A
Application :
Audio and General Purpose
(Ta=25°C)
2SC3519
2SC3519A
Unit
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1386/A)
s
Absolute maximum ratings
(Ta=25°C)
Symbol 2SC3519 2SC3519A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
160
160
5
15
4
130(Tc=25°C)
150
–55 to +150
180
180
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
V
EB
=5V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=0.5A
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
160
160
min
Conditions
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
100
max
180
100
max
180
min
50
min
50
typ
250
typ
µ
A
V
19.9
±0.3
4.0
µ
A
V
V
MHz
pF
a
b
ø3.2
±0.1
20.0min
4.0max
2.0
max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45
±0.1
B
C
E
5.45
±0.1
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1
I
B2
(A)
–1
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.3typ
t
f
(
µ
s)
0.45typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
0m
60
0m
A
V
CE
(sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo l t a g e V
CE( sa t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
( V
CE
= 4V )
15
A
70
5
A
00m
400
mA
300
mA
C ol l e c t o r C ur r en t I
C
( A)
10
2
C o l l e c t o r C u r r e n t I
C
( A)
200m
A
10
100mA
p)
(C
as
eT
50mA
12
˚C
I
B
=20mA
5A
0
0
1
2
3
4
0
0
0 .2
0.4
0. 6
0 .8
1 .0
0
0
–30
25
1
Ba s e - E m i t t or V o l t a ge V
B E
( V )
˚C
(Ca
C
se
Te
5
1
5
em
I
C
= 10 A
mp
)
2
Co ll e ct o r- Em i t t er Vo l t ag e V
C E
(V )
Bas e C ur r en t I
B
( A)
(V
C E
= 4 V )
300
D C C u rr en t G ai n h
FE
D C Cu r r en t G a i n h
FE
300
( V
C E
= 4V)
Transient Thermal Resistance
θ
j -a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
12 5˚ C
100
2 5˚ C
50
– 30 ˚ C
100
1
0 .5
Typ
50
10
0.02
0.1
0.5
1
5
10 15
10
0 .0 2
0. 1
0.5
1
5
10 15
0 .1
1
10
10 0
Time t(ms)
1000 2000
C o ll e ct o r C ur ren t I
C
( A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
80
40
Safe Operating Area
(Single Pulse)
13 0
10
ms
Pc – Ta Derating
10
Cu t-o ff Fre qu e n c y f
T
( M H
Z
)
60
Co lle c tor Cu r re nt I
C
( A)
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
Typ
5
DC
10 0
W
ith
In
fin
ite
he
40
at
1
0.5
Without Heatsink
Natural Cooling
1 .2 SC 35 19
2. 2 SC3 51 9 A
0.1
1
2
20 0
si
nk
50
20
W i t h o ut H e a ts i n k
3. 5
0
0
25
50
75
1 00
125
15 0
0
–0.02
– 0. 1
–1
–5
–10
0 .0 5
5
10
50
10 0
Em i t t er Cur ren t I
E
(A )
Col l e ct or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
66