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2SC3831 参数 Datasheet PDF下载

2SC3831图片预览
型号: 2SC3831
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(开关稳压器和通用) [Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)]
分类和应用: 晶体稳压器开关晶体管功率双极晶体管局域网
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC3831
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3831
600
500
10
10(
Pulse
20)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=600V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
1
max
100
max
500
min
10 to 30
0.5
max
1 . 3
max
8
typ
105
typ
(Ta=25°C)
2SC3831
Unit
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
mA
µ
A
4.0
V
V
MHz
pF
19.9
±0.3
a
b
ø3.2
±0.1
20.0min
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
40
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.5
I
B2
(A)
–1.0
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
4.5
max
t
f
(
µ
s)
0.5
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
10
.2
1A
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
( I
C
/ I
B
= 5)
Co l l e c t o r - Em i t t e r Sa t u r a t i o n V o l t a ge V
CE(s at)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V ol t ag e V
B E(sa t)
(V )
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
= 4V )
A
=1
800 mA
V
B E
( s at )
1
–5
mp)
5˚C (Case Te
e Temp
)
C ol l e c t o r C ur r en t I
C
( A)
6
400 mA
as
25˚C (C
C ol l e c t o r C ur r e nt I
C
( A )
8
I
B
60 0m A
8
6
p)
Tem
Te
(Ca
se
4
mp
200mA
4
˚C
(Cas
25˚C
(C
a
125
˚C
100mA
2
12
C
25
2
V
C E
( s a t)
0
0.02
0.05 0. 1
0.5
1
–5
C
0
0
1
2
3
4
5
10
0
0
0.2
0.4
0.6
0. 8
–55˚C
(Case
se
Temp
125˚C
(Case
e Te
mp)
)
)
Temp
)
1.0
1.2
Col l e ct o r- Em i t t er Vo l ta ge V
C E
(V )
C ol l e ct or C u r r e nt I
C
( A)
Ba s e - E m i tt o r Vo l ta g e V
B E
( V)
(V
C E
= 4 V )
50
125˚C
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
10
Sw i t c hi n g T i m e
t
on•
t
stg•
t
f
(
µ
s )
5
t
o n
•t
s tg
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
DC Cu r r e n t Ga i n h
FE
25˚ C
–5 5˚ C
t
s tg
V
CC
2 0 0 V
I
C
: I
B1
:I
B2
=1 0: 1 :– 2
1
1
0.5
t
on
0. 5
10
t
f
0.1
0 .2
0. 5
1
Co l le c to r C ur r en t I
C
( A)
5
10
5
0.02
0.05
0.1
0. 5
1
5
10
0. 1
1
10
T i m e t( m s )
1 00
1000
Co l le ct o r Curre nt I
C
( A)
Safe Operating Area
(Single Pulse)
30
1m
10
10
0
µ
s
Reverse Bias Safe Operating Area
30
10 0
Pc – Ta Derating
5
Col lec tor Cu rr e n t I
C
(A )
D
C
5
Co llec to r Cu r r en t I
C
( A)
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
10
s
10
W
ms
ith
In
fin
ite
1
0.5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B 2
= – 0 .5 A
Duty:less than 1%
he
50
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
1
0.05
0.01
50
0.02
8 10
50
1 00
500 600
10 0
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
5 00 6 00
3. 5
0
W i t h ou t H e at s i n k
0
25
50
75
100
1 25
150
Co l l ect o r - Em i t te r V ol ta ge V
C E
(V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
71