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2SC3835 参数 Datasheet PDF下载

2SC3835图片预览
型号: 2SC3835
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(加湿器, DC-DC转换器,以及通用) [Silicon NPN Triple Diffused Planar Transistor(Humidifier, DC-DC Converter, and General Purpose)]
分类和应用: 晶体转换器晶体管开关DC-DC转换器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC3835
Silicon NPN Triple Diffused Planar Transistor
(Switching Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3835
200
120
8
7(
Pulse
14)
3
70(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Humidifier, DC-DC Converter, and General Purpose
(Ta=25°C)
2SC3835
100
max
100
max
120
min
70 to 220
0.5
max
1.2
max
30
typ
110
typ
V
MHz
pF
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=200V
V
EB
=8V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
50
R
L
(Ω)
16.7
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.6
t
on
(
µ
s)
0.5
max
t
stg
(
µ
s)
3.0
max
t
f
(
µ
s)
0.5
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo l t a g e V
CE(s at)
( V )
7
200
mA
V
C E
(sat) – I
B
Characteristics
(Typical)
2.6
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
C E
= 4V )
150
mA
A
6
m
100
6
C o l l ec to r C u r r e n t I
C
( A)
2
C o l l ec t or C u r r e n t I
C
( A )
5
60mA
40m
A
5
4
4
p)
em
mp)
(Cas
e Te
eT
3
1
(Ca
s
20 m A
3
1
1
0
0.005 0.01
0
0
1
2
3
4
0.05
0.1
0.5
1
0
0
–30˚C
I
B
=10mA
25˚C
125
2
2
(Case
˚C
Temp
5A
)
3A
I
C
= 1
A
0.5
B as e- Em i t t or V o l t a g e V
BE
( V)
1.0 1.1
Co l l ect o r - Em i t t er V ol ta ge V
C E
(V)
Ba s e Cu r r en t I
B
( A)
(V
C E
= 4 V )
200
DC C ur r e nt Ga i n h
FE
DC C ur r e nt Ga i n h
FE
300
1 2 5 ˚C
( V
C E
= 4V)
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
100
100
25˚
C
–30
50
˚C
50
1
0.5
0.4
1
10
100
Time t(ms)
1000 2000
20
0.02
0. 1
0.5
1
5
7
20
0.01
0.05
0.1
0.5
1
5 7
Co l le ct o r C ur ren t I
C
(A)
Co l le c to r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=12 V)
30
20
10
C ut- off F re que n c y f
T
( M H
Z
)
5
Co llec to r Cu r r e n t I
C
( A )
20
Safe Operating Area
(Single Pulse)
10
Pc – Ta Derating
70
0
µ
s
M a xi mu m P o we r D i s s i p a t i o n P
C
( W )
60
W
10
ms
50
ith
In
fin
ite
40
he
1
0.5
Without Heatsink
Natural Cooling
at
si
nk
30
10
20
0.1
0
–0.01
0 .0 5
–0.05 – 0. 1
– 0.5
–1
–5
5
10
50
120
20 0
Em i t t er C u rre nt I
E
(A)
Col l ec t or - Em i t te r Vol t ag e V
C E
( V)
10
W i t ho u t He a t s i nk
3. 5
0
0
25
50
75
100
125
150
Am b i e n t T e m p er a t u r e T a( ˚ C )
75