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2SC3851 参数 Datasheet PDF下载

2SC3851图片预览
型号: 2SC3851
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型晶体管(音频和PPC高压电源和通用) [Silicon NPN Epitaxial Planar Transistor(Audio and PPC High Voltage Power Supply, and General Purpose)]
分类和应用: 晶体晶体管高压PC
文件页数/大小: 1 页 / 26 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC3851/3851A
Silicon NPN Epitaxial Planar Transistor
(Complement to type 2SA1488/A)
s
Absolute maximum ratings
(Ta=25°C)
Symbol 2SC3851 2SC3851A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
80
60
6
4
1
25(Tc=25°C)
150
–55 to +150
100
80
Unit
V
V
V
A
A
W
°C
°C
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=1A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.2A
V
CB
=10V, f=1MHz
Application :
Audio and PPC High Voltage Power Supply, and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
V
CB
=
80
100
max
60
min
80
min
40 to320
0.5
max
15
typ
60
typ
Conditions
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
2SC3851 2SC3851A
100
max
100
Unit
µ
A
µ
A
V
V
MHz
pF
2.54
2.2
±0.2
16.9
±0.3
V
8.4
±0.2
13.0min
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
12
R
L
(Ω)
6
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
200
I
B2
(mA)
–200
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1typ
t
f
(
µ
s)
0.3typ
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
Co l l e c t o r - E m i t t e r Sa t u r a t i o n V o lt a ge V
CE(s a t)
( V )
4
V
C E
(sat) – I
B
Characteristics
(Typical)
I
C
– V
B E
Temperature Characteristics
(Typical)
4
( V
CE
= 4 V )
0m
60mA
50m A
I
B
=7
A
C o l l ec to r C u r r e n t I
C
( A )
3
30mA
C o l l ec t or C u r r e n t I
C
( A)
40mA
1.0
3
emp
)
2
2
Tem
p)
20mA
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
0.5
3A
(Ca
C(
25˚C
I
C
= 1 A
0
0
1
2
3
4
5
6
0
0.005 0.01
0.05
0.1
0.5
1
0
0
0 .5
B a s e - Em i t t o r Vo l t a g e V
B E
( V )
–30˚
5mA
2A
C (C
1
1
125
˚
ase
10mA
Tem
p
Ca
se
se T
1.0
)
1.2
C ol l e ct or - Em it t e r V ol ta ge V
C E
(V )
Bas e C ur r e nt I
B
( A)
( V
C E
=4 V)
500
DC C ur r e nt Ga i n h
F E
DC C ur r e nt Ga i n h
F E
500
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j- a
(˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
125˚C
25 ˚C
Typ
100
100
– 3 0 ˚C
50
50
1
20
0.01
0.1
0 .5
1
4
20
0 .0 1
0 . 05
0.1
0. 5
1
4
0.5
1
10
Time t(ms)
100
1000
C ol l e ct or C urre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
40
(V
C E
= 1 2 V )
10
Safe Operating Area
(Single Pulse)
30
1m
10
0m
Pc – Ta Derating
s
10
s
30
C olle c tor Cu r re n t I
C
(A )
DC
s
M ax im um P o wer Di s s i p a t i o n P
C
( W )
5
C ut- off Fr eq u e n c y f
T
( M H
Z
)
m
W
20
ith
In
fin
1
0.5
ite
20
Typ
he
at
si
nk
10
10
Without Heatsink
Natural Cooling
0.1
W i t h ou t H ea t s i nk
3
5
10
50
80
0
0
–0.005
–0 .1
– 0. 5 – 1
–4
Emi t t e r Cu rre nt I
E
(A )
0.05
Co l le c to r - Em it t er Vo l ta ge V
C E
( V )
0
50
100
150
A m b i e n t T em p e r at u r e T a ( ˚ C )
76