2SC3927
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3927
900
550
7
10(
Pulse
15)
5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
2SC3927
100
max
100
max
550
min
10 to 28
0.5
max
1.2
max
6
typ
105
typ
V
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
50
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.75
I
B2
(A)
–1.5
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
0.5
max
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
10
1.
2A
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
Co l l e c t o r - E m i t t e r Sa t u r a t i o n V o l t a ge V
CE(s a t)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V o l t a ge V
B E( sa t)
( V )
( I
C
/ I
B
= 5)
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
C E
=4 V )
1A
80 0m A
60 0m A
C ol l e c t o r C ur r en t I
C
( A)
e Te
–55˚C (Cas
25˚C (C
mp)
p)
6
400 mA
ase Tem
C o l l ec t or C u r r e n t I
C
( A )
8
1
V
B E
( s at )
8
6
p)
mp
4
4
eT
200mA
125˚C
˚C (
Cas
(Case
25˚C
(C
a
I
B
=100mA
125
12
25
2
C
5˚
2
˚C
V
C E
( s a t)
0
0.02
0.05 0 .1
0.5
1
–5
5
0
0
1
2
3
4
5
10
0
0
0.2
0.4
0.6
0.8
–55˚C
˚C
(Case
se
Te
Temp)
)
em
(Case
Temp
)
Temp
)
1.0
1.2
Co ll e ct o r- Em i t ter Vo l t ag e V
C E
(V)
Co l le c to r Cu r r en t I
C
( A)
B a s e - Em i t t o r Vo l ta g e V
BE
( V)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
50
Sw i t c h i n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
125 ˚C
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
Transient Thermal Resistance
θ
j -a
( ˚ C/ W )
10
2
θ
j- a
– t Characteristics
D C C u r r e n t Gai n h
F E
25 ˚C
5
V
CC
2 5 0 V
I
C
:I
B1
: – I
B2
= 1 0: 1. 5 :3
t
s tg
1
–5 5˚ C
1
0 .5
t
on
t
f
0 .1
0.2
0 .5
1
Co l l ec to r C ur r en t I
C
( A)
5
10
0. 5
10
5
0.02
0. 05
0.1
0.5
1
5
10
0. 1
1
10
Time t(ms)
1 00
1 0 00
C ol l ec t or Cur ren t I
C
(A)
Safe Operating Area
(Single Pulse)
20
10
5
Co llec to r Cu r r e n t I
C
( A )
DC
10
Reverse Bias Safe Operating Area
20
1 20
P c – Ta Derating
s
M ax im um P o wer Di s s i pa t i o n P
C
( W )
ms
1m
10
10
0
µ
s
5
Co lle cto r C ur r e n t I
C
( A )
1 00
W
ith
In
fin
ite
1
0.5
1
0 .5
he
at
si
nk
50
0.1
0.05
0.02
10
Without Heatsink
Natural Cooling
0 .1
0 .0 5
0 .0 2
50
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
10 0
5 00
10 00
50
1 00
500 600
3. 5
0
W i t ho u t He a t s i nk
0
25
50
75
100
125
150
C ol l ec t or - Emi t t e r V ol ta ge V
C E
( V)
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
82
SANKEN [ SANKEN ELECTRIC ]
