2SC4020
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4020
900
800
7
3(
Pulse
6)
1.5
50(Tc=25°C)
150
–55 to +150
(Ta=25°C)
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
2SC4020
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
40
typ
V
MHz
pF
2.5
B C E
12.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
External Dimensions
MT-25(TO220)
3.0
±0.2
10.2
±0.2
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
16.0
±0.7
8.8
±0.2
a
b
ø3.75
±0.2
V
1.35
0.65
+0.2
-0.1
2.5
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
357
I
C
(A)
0.7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.35
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
1
max
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
3
50
0m
A
400mA
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
Co l l e c t o r - E m i t t e r Sa t u r a t i o n V o l t a ge V
CE(sa t)
( V )
Ba s e - E m i tt e r S at u r a t i o n V o l t a g e V
B E(s a t)
(V )
2
( I
C
/I
B
= 5)
I
C
– V
B E
Temperature Characteristics
(Typical)
3
( V
C E
= 4V )
300 mA
C o l l ec to r C u r r e n t I
C
( A )
2
200 mA
C o l l e c t o r C u r r e nt I
C
( A)
2
140m A
100mA
p)
mp)
25˚C (C
ase Te
Tem
V
B E
( s at )
I
B
=20mA
V
C E
( sa t )
0
0.03 0.05
0 .1
0. 5
1
5
0
0
0. 2
0.4
0.6
0.8
1. 0
1.2
0
0
1
2
3
4
Col l e ct or - Em it t er Vo l t ag e V
C E
(V )
Co l le c to r Cu r r e n t I
C
( A)
B a s e - Em i t t o r Vo l ta g e V
B E
( V)
(V
C E
=4 V)
50
1 25 ˚C
DC C u r r e nt Ga i n h
FE
25 ˚ C
–3 0˚ C
10
Sw i t c hi n g T i m e
t
o n•
t
stg•
t
f
(µ s)
6
5
t
s tg
V
CC
250V
I
C
:I
B1
:– I
B2
=2:0.3:1 Const.
1
t
f
0.5
t
on
0.2
0.1
0 .5
1
3
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
θ
j- a
– t Characteristics
5
1
5
0 .5
0 .3
2
0. 02
0.05
0.1
0.5
1
3
1
10
100
Time t(ms)
–30˚C (C
1
1
125˚
C (C
60mA
ase Tem
1
ase
p)
1 0 00 2 0 00
C ol l ec t or C u rre nt I
C
(A )
Co l le c to r Cu r r e n t I
C
( A)
Safe Operating Area
(Single Pulse)
10
10
Reverse Bias Safe Operating Area
50
P c – Ta Derating
M ax im um P o wer Di s s i p a t i o n P
C
( W )
5
10
0
µ
5
40
W
ith
C oll ec tor Cu r r e n t I
C
(A )
Co lle cto r C u r re nt I
C
( A )
s
In
fin
30
ite
he
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
at
si
nk
0.5
Without Heatsink
Natural Cooling
20
0 .5
10
W i t h ou t H ea t s i n k
0
25
50
75
100
125
1 50
0.1
50
1 00
50 0
1000
0 .1
50
1 00
50 0
10 0 0
2
0
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V )
Co ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
83
SANKEN [ SANKEN ELECTRIC ]
