2SC4139
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4139
500
400
10
15(
Pulse
30)
5
120(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=1.6A
I
C
=8A, I
B
=1.6A
V
CE
=12V, I
E
=–1.5A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
85
typ
(Ta=25°C)
2SC4139
Unit
µ
A
µ
A
V
V
MHz
pF
20.0min
19.9
±0.3
4.0
a
b
ø3.2
±0.1
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
25
I
C
(A)
8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.8
I
B2
(A)
–1.6
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
15
1
A
.5
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo lt a g e V
C E( sa t)
(V )
Ba s e- E m i t t er S a t ur a t i o n Vo l ta g e V
BE (sat)
( V )
( I
C
/ I
B
= 5)
1.5
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
= 4V )
1 .2 A
80 0m A
C o l l e c t o r Cu r r e n t I
C
( A )
600mA
8
V
B E
( s a t)
1.0
–55˚C (Cas
25˚C (C
125˚C
10
e Temp)
C o l l e c t o r C u r r e nt I
C
( A)
6
p)
Tem
400 mA
Temp
(Case
25˚C
as
)
e Temp)
p)
em
p)
˚C
eT
25
125
as
˚C (
5
I
B
=100mA
12
5˚
C
(
2
–
˚
55
C
V
C E
( sa t )
0
0.03 0.05
0. 1
0 .5
1
5
0
0
1
2
3
4
10
20
0
0
0 .2
0.4
0.6
0. 8
–55˚C
C
(Case
200m A
0.5
Cas
e
Tem
(Case
4
Temp)
1.0
1.2
Co l l ect o r - Em i t t er Vo l t ag e V
C E
( V)
Co l le c to r Cu r r en t I
C
( A)
Ba s e - E m i t to r V ol t ag e V
B E
( V)
(V
C E
=4 V)
50
8
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
125˚C
D C C u r r e n t G ai n h
FE
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
5
t
o n
•t
s tg
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
t
s tg
V
C C
2 0 0V
I
C
: I
B 1
: I
B2
= 10 :1 : –2
1
0.5
t
on
25˚C
–55˚C
1
0.5
10
t
f
0.1
0.5
1
5
C ol l ec t or C ur r en t I
C
( A)
10
15
5
0.02
0.05
0. 1
0.5
1
5
10 15
0.1
1
10
Time t(ms)
100
10 0 0
C ol l ec t or Cur ren t I
C
(A )
Safe Operating Area
(Single Pulse)
50
50
Reverse Bias Safe Operating Area
120
Pc – Ta Derating
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
10
0
µ
s
100
W
ith
Co llec t o r C u r r e n t I
C
( A)
C oll ec to r Cu r r e n t I
C
(A )
In
fin
10
10
ite
he
at
si
nk
5
Without Heatsink
Natural Cooling
5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1A
Duty:less than 1%
50
1
5
10
50
1 00
500
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V)
1
5
10
50
10 0
5 00
3 . 5 W i t ho u t H ea t s i nk
0
0
25
50
75
10 0
125
150
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
91
SANKEN [ SANKEN ELECTRIC ]
