2SC4140
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4140
500
400
10
18(
Pulse
36)
6
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=2A
I
C
=10A, I
B
=2A
V
CE
=12V, I
E
=–2.0A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
165
typ
(Ta=25°C)
2SC4140
Unit
µ
A
µ
A
V
V
MHz
pF
20.0min
19.9
±0.3
4.0
a
b
ø3.2
±0.1
4.0max
V
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
20
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1
I
B2
(A)
–2
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
5.45
±0.1
B
C
E
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
18
16
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE (sa t)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
BE (sa t)
( V )
( I
C
/ I
B
= 5)
1 .4
I
C
– V
B E
Temperature Characteristics
(Typical)
18
16
( V
CE
= 4 V )
1.6A
1. 2A
C o l l e c t o r Cu r r e n t I
C
( A )
80 0m A
1
Temp)
–55˚C (Case
C o l l e c t o r C u r r e nt I
C
( A)
V
B E
( s at )
12
600m A
400 mA
12
mp
)
25˚C (Ca
se Temp
)
mp)
e Te
–55˚
eT
em
p)
25
˚C
I
B
=100mA
1
˚
25
C
(C
4
4
V
C E
( sa t )
0
0 .0 2 0 . 0 5 0. 1
0. 5
1
5
–5
5˚
C
0
0
1
2
3
4
1 0 18
0
0
0 .2
0.4
0.6
25˚C
125
0.8
C (C
as
˚C
200mA
(Cas
ase
(Ca
1
emp)
ase T
25˚C (C
se
Tem
Te
8
8
p)
1.0
1.2
C ol l ec t or - Emi t t er Vo l t ag e V
C E
( V)
Co l le c to r Cu r r en t I
C
( A)
Ba s e- E m i t t or V o l t a ge V
BE
( V )
(V
C E
= 4 V )
50
10
Transient Thermal Resistance
θ
j-a
( ˚C / W )
h
F E
– I
C
Characteristics
(Typical)
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
125˚C
D C C u r r e n t G ai n h
FE
5
V
CC
2 0 0 V
I
C
: I
B 1
: – I
B2
= 10 :1 : 2
t
s tg
25˚C
1
–55˚C
1
0.5
t
on
0.5
10
t
f
0.1
0.2
0.5
1
5
10
18
5
0.02
0.05
0.1
0. 5
1
5
10 18
0.1
1
10
Time t(ms)
100
1000
C ol l ec t or Cu rren t I
C
( A)
C o ll e ct o r C u r r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
50
10
ms
Reverse Bias Safe Operating Area
50
130
Pc – Ta Derating
1m
10
s
0
µ
s
10
Co lle ct o r C u r r e n t I
C
( A )
5
DC
C oll ec to r Cu r r e n t I
C
(A )
10
5
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
100
W
ith
In
fin
ite
he
at
1
0.5
Without Heatsink
Natural Cooling
0.1
0.05
0.03
5
10
50
1 00
500
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
si
nk
50
0.1
0 .0 5
0 .0 3
5
10
50
10 0
50 0
3.5
0
W i th o u t H e a t s i n k
0
25
50
75
100
1 25
1 50
Co l l ec t or - Emi t t e r V ol ta ge V
C E
(V )
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
92
SANKEN [ SANKEN ELECTRIC ]
