2SC4297
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4297
500
400
10
12(
Pulse
24)
4
75(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=1.4A
I
C
=7A, I
B
=1.4A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
2SC4297
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
105
typ
V
V
MHz
pF
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
28.5
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.7
I
B2
(A)
–1.4
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
12
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
C E(s at)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
B E(s at)
( V)
( I
C
/I
B
= 5 )
I
C
– V
B E
Temperature Characteristics
(Typical)
12
( V
CE
= 4 V )
1A
10
C o l l e c to r C u r r e n t I
C
( A)
800mA
60 0m A
10
1
–55˚C (Case
Temp)
C ol l e c t o r C ur r en t I
C
( A)
V
B E
( s at )
8
400 mA
8
Tem
p)
6
25˚C (Ca
se Temp
)
as
e
2 5
Temp
)
˚C
4
4
125
Ca
200mA
1
(Cas
e Te
I
B
=100mA
2
12
5˚
V
C E
( s at )
0
0.02
0 .0 5 0 . 1
0 .5
1
5
5
–5
˚C
2
0
0
1
2
3
4
10
0
0
0.2
0.4
0.6
0 .8
–55˚C
C
25˚C
(C
1.0
(Case
˚C
(
Temp
emp)
ase T
25˚C (C
mp)
6
se
)
Col l e ct or - Em it t er Vo l t ag e V
C E
(V )
C ol l ec t or C ur r en t I
C
( A)
Ba s e - E m i t t or V o l t a ge V
BE
( V )
(V
C E
= 4 V )
50
S w i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
125˚C
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Characteristics
(Typical)
8
5
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
D C C ur re nt Ga i n h
FE
t
s tg
V
CC
2 0 0 V
I
C
: I
B 1
:– I
B 2
= 1 0: 1: 2
1
0.5
t
on
25˚C
–30˚C
1
0.5
10
t
f
0.1
0.5
1
C ol l ec t or C ur r en t I
C
( A)
5
10
5
0.02
0.05
0.1
0 .5
1
5
10 12
0.1
1
10
Time t(ms)
100
3.0
1.2
1 00 0
C o ll e ct o r C ur ren t I
C
(A)
Safe Operating Area
(Single Pulse)
30
10
0
µ
s
Reverse Bias Safe Operating Area
30
80
Pc – Ta Derating
10
C oll ec to r Cu rr e n t I
C
(A )
Co llec to r C u r r e n t I
C
( A )
5
10
5
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
60
W
ith
In
fin
ite
he
40
at
si
nk
1
0.5
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
Without Heatsink
Natural Cooling
20
0.1
5
10
50
1 00
500
C o l le ct o r - Em i t t er V ol ta ge V
C E
(V )
0 .1
5
10
50
100
5 00
3. 5
0
W i t h ou t H ea t s i n k
0
50
100
1 50
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er at u r e T a ( ˚ C )
95
SANKEN [ SANKEN ELECTRIC ]
