2SC4298
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4298
500
400
10
15(
Pulse
30)
5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=1.6A
I
C
=8A, I
B
=1.6A
V
CE
=12V, I
E
=–1.5A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
85
typ
(Ta=25°C)
2SC4298
Unit
µ
A
23.0
±0.3
V
V
V
MHz
pF
9.5
±0.2
µ
A
a
b
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
25
I
C
(A)
8
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.8
I
B2
(A)
–1.6
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
3
max
t
f
(
µ
s)
0.5
max
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
15
1
A
.5
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
( I
C
/I
B
= 5)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
B a s e - Em i t t e r Sa t u r a ti o n V o l t a ge V
B E(s at)
( V )
1.5
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
= 4 V )
1 .2 A
80 0m A
8
V
B E
( s at )
1.0
e
–55˚C (Cas
Temp)
C o l l e c t o r Cu r r e n t I
C
( A )
10
600 mA
C o l l e c t o r C u r r e nt I
C
( A)
6
p)
Tem
400m A
eT
˚C (
5
200mA
I
B
=100mA
0.5
12
5˚
C
(
2
–
˚
55
C
V
C E
( s at )
0
0.03 0.05
0. 1
0 .5
1
5
0
0
1
2
3
4
10
20
0
0
0.2
0.4
0.6
25˚C
(
25
125
C
as
Case
125˚C
em
p)
˚C
(Case
Cas
e
Temp
)
4
0. 8
–55˚C
(Case
Temp)
Temp
25˚C (C
as
)
e Temp)
1.0
C ol l ec t or - Emi t t er Vo l ta ge V
C E
( V)
Co l le c to r Cu r r en t I
C
( A)
Ba s e - E m i tt o r V ol t ag e V
B E
( V)
(V
C E
=4 V)
50
8
Transient Thermal Resistance
θ
j-a
( ˚ C /W )
h
FE
– I
C
Characteristics
(Typical)
125˚C
D C C u r r e n t G ai n h
FE
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
5
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
2
t
s tg
V
CC
2 0 0 V
I
C
:I
B 1
: I
B 2
= 10 :1 : –2
1
0 .5
t
on
25˚C
–55˚C
1
0 .5
10
t
f
0 .1
0.5
1
5
C ol l ec t or C ur r en t I
C
( A)
10
15
5
0.02
0.05
0.1
0 .5
1
5
10 15
0 .1
1
10
T i m e t( m s )
100
3.0
1.2
10 0 0
C ol l ec t or Cur ren t I
C
(A )
Safe Operating Area
(Single Pulse)
50
50
Reverse Bias Safe Operating Area
80
Pc – Ta Derating
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
10
0
µ
s
60
W
ith
Co lle ct o r C u r r e n t I
C
( A )
C oll ec to r Cu r r e n t I
C
(A )
In
fin
10
10
ite
he
40
at
si
nk
5
Without Heatsink
Natural Cooling
5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1A
Duty:less than 1%
20
W i t h o ut H e at s i n k
1
5
10
50
10 0
500
1
5
10
50
1 00
5 00
3 .5
0
0
25
50
75
10 0
125
150
C ol l ec t or - Emi t te r V ol ta ge V
C E
(V )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r at u r e T a ( ˚ C )
96
SANKEN [ SANKEN ELECTRIC ]
