2SC4304
Silicon NPN Triple Diffused Planar Transistor
(High Voltage High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4304
900
800
7
3(
Pulse
6)
1.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
15
typ
50
typ
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
2SC4304
Unit
µ
A
V
V
V
MHz
pF
13.0min
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
357
I
C
(A)
0.7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.35
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4.0
max
t
f
(
µ
s)
0.7
max
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
3
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
Ba s e - E m i t te r S at u r a t i o n Vo lt a g e V
B E(s at)
( V )
( I
C
/ I
B
= 5)
I
C
– V
BE
Temperature Characteristics
(Typical)
3
( V
C E
= 4V )
700mA
50 0m A
V
C E
( s a t)
2
25˚C (Case Temp)
125˚C (Case Temp)
C o l l e c t o r Cu r r e n t I
C
( A )
300 mA
2
200 mA
C o l l ec t or C u r r e n t I
C
( A )
–55˚C (Case Temp)
2
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
e Te
mp)
p)
Tem
Case
100mA
1
V
BE
( s at )
)
–55˚C (Case Temp
Temp)
25˚C (Case
125˚C (Case
Temp)
Cas
125
˚C (
0
0
1
2
3
4
0
0.01
0.05
0. 1
0. 5
1
3
0
0
0.2
0.4
0.6
0 .8
–55˚C
(
I
B
=50m A
25˚C
(
1
1
Case
Temp
)
1.0
1 .2
Co ll e ct o r- Em i t ter Vo l tag e V
C E
(V )
Co l le c to r Cu r r e n t I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V)
(V
CE
=4 V)
50
D C C ur re n t Gai n h
F E
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
12 5˚ C
2 5˚ C
–5 5˚ C
10
7
5
V
CC
2 5 0 V
I
C
: I
B 1
:– I
B 2
= 1 0: 1 .5 :5
1
t
f
0.5
t
on
0.1
0.1
t
s tg
Transient Thermal Resistance
θ
j- a
( ˚C /W )
h
FE
– I
C
Characteristics
(Typical)
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
θ
j - a
– t Characteristics
4
1
5
0. 5
0. 3
2
0.01
0. 0 5
0. 1
0. 5
1
3
0. 5
C ol l ec t or C ur r e nt I
C
( A)
1
2
1
10
Time t(ms)
100
1 0 00
C ol l ec t or C urr en t I
C
( A)
Safe Operating Area
(Single Pulse)
10
5
50
µ
s
10
0
µ
Reverse Bias Safe Operating Area
10
5
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
30
35
Pc – Ta Derating
W
ith
Co ll ec t o r Cu r r e n t I
C
( A)
1
0.5
Co llec t o r C u r r e n t I
C
( A )
1
0.5
s
1m
DC
( Tc
=2
5
C
)
In
s
fin
ite
10
ms
20
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0.01
0 .1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
10
0.01
5
10
50
10 0
50 0
1000
0.005
50
1 00
50 0
1 00 0
2
0
W i t h o ut H e a ts i n k
0
25
50
75
100
1 25
1 50
0.005
2
Co ll e ct o r -Em i t t er V ol tag e V
C E
(V )
C o ll e ct o r - Em i t t er Vo lt a ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C )
100
SANKEN [ SANKEN ELECTRIC ]
