2SC4445
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4445
900
800
7
3(
Pulse
6)
1.5
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
15
typ
50
typ
(Ta=25°C)
2SC4445
Unit
µ
A
23.0
±0.3
V
V
V
MHz
pF
9.5
±0.2
µ
A
a
b
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
357
I
C
(A)
0.7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.35
t
on
(
µ
s)
0.7
max
t
stg
(
µ
s)
4
max
t
f
(
µ
s)
0.7
max
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
3
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l e c t o r - E m i t te r S a tu r a t i o n Vo lt a g e V
C E( sa t)
(V )
Ba s e- E m i t t er S a t ur a t i o n Vo l ta g e V
BE (sat)
( V )
( I
C
/I
B
= 5 )
I
C
– V
B E
Temperature Characteristics
(Typical)
3
( V
CE
=4 V )
I
B
=700mA
50 0m A
V
C E
( s at )
2
25˚C (Case Temp)
125˚C (Case Temp)
C o l l e c t o r Cu r r e n t I
C
( A )
300 mA
C o l l ec t or C u r r e n t I
C
( A )
–55˚C (Case Temp)
2
200 mA
2
e Te
mp)
p)
Tem
125
˚C (
0
0
1
2
3
4
0
0.01
0.05
0. 1
0.5
1
3
0
0
0.2
0 .4
0 .6
0.8
–55˚C
(
50mA
25˚C
(
1
)
–55˚C (Case Temp
Temp)
25˚C (Case
Temp)
125˚C (Case
Case
100mA
1
V
B E
( sa t )
Cas
1
Case
Temp
)
1.0
C o l l ect o r - Em i t te r V ol ta ge V
C E
(V)
C ol l ec t or C ur r en t I
C
( A)
Ba s e - E m i t to r V ol t ag e V
BE
( V)
h
FE
– I
C
Temperature Characteristics
(Typical)
(V
C E
=4 V )
50
D C C ur re n t Gai n h
F E
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
12 5˚ C
25 ˚ C
– 55 ˚ C
10
7
5
t
o n
•t
s tg
• t
f
– I
C
Characteristics
(Typical)
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
4
θ
j - a
– t Characteristics
V
CC
2 5 0 V
I
C
: I
B1
: – I
B 2
= 1 0: 1. 5 :5
1
t
f
0.5
t
on
0.1
0.1
t
s tg
1
5
0.5
0.3
2
0. 01
0. 0 5
0.1
0 .5
1
3
0. 5
C ol l ec t or C ur r en t I
C
( A)
1
2
1
10
Time t(ms)
100
3.0
1. 2
1 0 00
C ol l ec t or Cu rren t I
C
(A)
Safe Operating Area
(Single Pulse)
10
5
50
µ
s
Reverse Bias Safe Operating Area
10
5
60
Pc – Ta Derating
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
W
10
ith
Co ll ec t o r Cu r r e n t I
C
( A)
C oll ec to r Cu r r e n t I
C
(A )
0
µ
s
40
In
fin
ite
1
0.5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
he
at
si
nk
20
Without Heatsink
Natural Cooling
0.1
0.05
5
10
50
1 00
50 0
1000
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V)
0.1
0.05
5
W i t h o ut H e at s i n k
100
500
10 00
3. 5
0
0
50
1 00
150
10
50
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
105
SANKEN [ SANKEN ELECTRIC ]
