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2SC4467 参数 Datasheet PDF下载

2SC4467图片预览
型号: 2SC4467
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管(音频和通用) [Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC4467
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1694)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4467
160
120
6
8
3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SC4467
10
max
10
max
120
min
50
min
1.5
max
20
typ
200
typ
V
pF
20.0min
4.0max
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=160V
V
EB
=6V
I
C
=50mA
V
CE
=4V, I
C
=3A
I
C
=3A, I
B
=0.3A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
4.0
V
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
O(50 to100), P(70 to140), Y(90 to180)
5.45
±0.1
B
C
E
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
10
I
C
(A)
4
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.4
I
B2
(A)
–0.4
t
on
(
µ
s)
0.13
typ
t
stg
(
µ
s)
3.50
typ
t
f
(
µ
s)
0.32
typ
5.45
±0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
350m
V
CE
( sat ) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i t te r S at u r a t i o n Vo lt a g e V
C E(s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
8
( V
CE
= 4 V )
A
8
0m
20
15
0m
A
A
10
0mA
75mA
C o l l e c t o r Cu r r e n t I
C
( A )
2
50m A
C ol l e c t o r C u r r e nt I
C
( A)
6
6
4
4
mp)
20mA
2
Cas
˚C (
2
(Cas
I
B
=10mA
I
C
= 8A
0
2A
0. 5 0. 6 0. 7 0. 8
4A
0.9 1.0
0
0
0
0
1
2
3
4
0
0 . 1 0 .2 0 .3 0 .4
0.5
–30˚C
25˚C
125
(Case
1
e Te
mp)
e Te
Temp
)
1 .0
1.5
Col l e ct or - Em it t er Vo l t ag e V
C E
(V )
Ba s e C ur r en t I
B
( A)
Ba s e - E m i t to r V ol t ag e V
B E
( V)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
=4 V )
200
D C C u r r e n t Gai n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
200
1 25 ˚ C
DC C ur r e nt Ga i n h
F E
Transient Thermal Resistance
θ
j -a
( ˚C /W )
3
θ
j - a
– t Characteristics
Typ
100
100
2 5˚ C
–3 0 ˚ C
1
50
50
0. 5
20
0. 02
0.1
0 .5
1
5
8
20
0.02
0. 3
0. 1
0. 5
1
5
8
1
10
Time t(ms)
10 0
10 0 0
C ol l e ct o r Cu rre nt I
C
(A )
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=12 V )
40
20
Safe Operating Area
(Single Pulse)
80
10
m
s
Pc – Ta Derating
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
30
Co lle ct o r C u r r e n t I
C
( A )
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
10
5
100ms
60
W
ith
Typ
DC
In
fin
ite
he
20
40
at
si
1
nk
0 .5
Without Heatsink
Natural Cooling
10
20
Without Heatsink
0
–0.02
–0 . 1
–1
Em i t t er C u rre nt I
E
(A)
–8
0 .1
5
10
50
10 0
2 00
3.5
0
0
25
50
75
100
1 25
1 50
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
107