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2SC4511 参数 Datasheet PDF下载

2SC4511图片预览
型号: 2SC4511
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管(音频和通用) [Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC4511
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SA1725)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4511
120
80
6
6
3
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SC4511
10
max
10
max
80
min
50
min
0.5
max
20
typ
110
typ
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
∗h
FE
Rank
Conditions
V
CB
=120V
V
EB
=6V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
O(50 to100), P(70 to140), Y(90 to180)
2.54
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
10
I
C
(A)
3
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.3
I
B2
(A)
–0.3
t
on
(
µ
s)
0.16
typ
t
stg
(
µ
s)
2.60
typ
t
f
(
µ
s)
0.34
typ
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
0m
A
15
0m
A
10
0m
A
80m
A
V
CE
(sat ) – I
B
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4 V )
6
20
5
C o l l e c to r C u r r e n t I
C
( A)
50 m A
C o l l ec to r C u r r e n t I
C
( A)
4
2
4
3
30mA
125
˚C (
Cas
e Te
25˚C
mp
(Cas
e Tem
)
p)
1
I
C
= 6A
4A
2A
0
0
0. 5
1 .0
1. 5
0
0
0
0
1
2
3
4
–30˚C
I
B
=10mA
(Case
2
20mA
1
2
1
B as e- Em i t t or V o l t a g e V
BE
( V )
Temp
)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
2
Co l l ec t or - Emi t t er Vo l ta ge V
C E
(V )
Ba se C u r r e nt I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=4 V)
300
DC Cu r r e nt Ga i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V)
200
1 2 5˚ C
DC C ur re nt Ga i n h
FE
Transient Thermal Resistance
θ
j- a
( ˚ C /W )
5
θ
j - a
– t Characteristics
100
25 ˚ C
– 3 0˚ C
100
Typ
50
1
50
0.5
0.4
1
10
1 00
Time t(ms)
10 0 0 20 0 0
30
0.02
0.1
0 .5
1
56
20
0.02
0 .1
0.5
1
56
Co l le ct o r Curre nt I
C
(A)
Co l l ec to r C ur r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
40
20
10
Cu t-o ff F re q u e n c y f
T
( M H
Z
)
30
Co llec t o r C u r r e n t I
C
( A )
5
Safe Operating Area
(Single Pulse)
30
10
m
Pc – Ta Derating
10
DC
0m
Ma x im um P ow e r D i s s i p a t i on P
C
( W )
s
W
s
ith
Typ
20
In
fin
ite
he
20
1
0 .5
at
si
nk
10
10
Without Heatsink
Natural Cooling
0 .1
Without Heatsink
2
5
10
50
10 0
0
0
25
50
75
100
1 25
15 0
0
–0.02
– 0. 1
–1
–6
0.05
3
Em i t t er Cu rre nt I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e nt T e m pe r a t u r e T a ( ˚ C)
110