2SC4557
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4557
900
550
7
10(
Pulse
20)
5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
2SC4557
100
max
100
max
550
min
10 to 28
0.5
max
1.2
max
6
typ
105
typ
V
V
16.2
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=1A
I
C
=5A, I
B
=1A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
Unit
µ
A
23.0
±0.3
V
9.5
±0.2
µ
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(Ω)
50
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.75
I
B2
(A)
–1.5
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
5
max
t
f
(
µ
s)
0.5
max
3.35
B
C
E
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
10
A
1.2
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
Ba s e - E m i t te r S at u r a t i o n Vo lt a g e V
B E(s at)
( V )
( I
C
/I
B
= 5)
2
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
=4 V )
1A
80 0m A
8
C o l l e c t o r Cu r r e n t I
C
( A )
6
400 mA
C o l l ec t or C u r r e n t I
C
( A )
60 0m A
8
6
p)
Temp
1
–55˚C (Case Temp)
Temp)
25˚C (Case
p)
ase Tem
125˚C (C
V
B E
( sa t )
)
4
4
eT
200m A
(Case
Cas
125
2
2
ase
125˚C
(C
p
Te
m
)
V
C E
( s at )
0
0.02
0.05
0 .1
0
0
1
2
3
4
0 .5
1
–5
5
5˚C
10
0
0
0.2
0. 4
0. 6
0.8
–55˚C
25˚C
25˚C
I
B
=100mA
˚C (
(Case
Temp)
em
1. 0
Co l le ct o r -Em i t t er Vo l t ag e V
C E
(V )
C ol l e ct or C u r r e nt I
C
( A)
B as e- Em i t t o r Vo l t a g e V
BE
( V )
(V
C E
= 4 V )
50
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
125 ˚C
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
h
FE
– I
C
Temperature Characteristics
(Typical)
10
25 ˚C
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
t
s tg
V
CC
2 5 0 V
I
C
: I
B1
:– I
B 2
= 1 0: 1. 5 :3
θ
j - a
– t Characteristics
2
D C C u r r e n t G ai n h
FE
5
1
–5 5˚ C
1
0.5
t
on
t
f
0.1
0.2
0. 5
1
Co l l ec to r C ur r en t I
C
( A)
5
10
0.5
10
5
0.02
0.05
0.1
0 .5
1
5
10
0.1
1
10
Time t(ms)
100
3.0
1.2
1 00 0
C ol l ec t or Cur ren t I
C
(A)
Safe Operating Area
(Single Pulse)
20
10
5
Co llec t o r C u r r e n t I
C
( A)
10
Reverse Bias Safe Operating Area
20
10
80
Pc – Ta Derating
0
µ
s
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
Co lle ct o r C u r r e n t I
C
( A )
5
60
W
ith
In
fin
ite
he
40
at
si
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–1.0A
Duty:less than 1%
nk
0.5
Without Heatsink
Natural Cooling
0 .5
20
Without Heatsink
0.1
10
50
10 0
50 0
1000
0 .1
10
50
10 0
5 00
1 00 0
3.5
0
0
25
50
75
100
12 5
1 50
Co ll e ct o r -Em i t t er Vo l tag e V
C E
(V )
Col l ec t or - Em i tt e r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
115
SANKEN [ SANKEN ELECTRIC ]
