2SC4662
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4662
500
400
10
5(
Pulse
10)
2
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=1.5A
I
C
=1.5A, I
B
=0.3A
I
C
=1.5A, I
B
=0.3A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
20
typ
30
typ
(Ta=25°C)
2SC4662
Unit
µ
A
V
V
V
MHz
pF
13.0min
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
133
I
C
(A)
1.5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.15
I
B2
(A)
–0.3
t
on
(
µ
s)
1
max
t
stg
(
µ
s)
2.5
max
t
f
(
µ
s)
0.5
max
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
V
CE
(sat),V
BE
(sat) – I
C
Temperature Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE (sa t)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
BE (sa t)
( V )
( I
C
/ I
B
= 5 )
2
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
= 4 V )
5
–55˚C
C o l l ec t or C u r r e n t I
C
( A )
4
3
1
–55˚C (Case
V
B E
( s at )
Temp)
mp)
mp
Tem
p)
mp)
e Te
(Cas
Cas
e
Te
25˚C (Case
2
˚C (
Te
ase Tem
125˚C (C
p)
V
C E
( sa t )
0
0.01
0.05
0 .1
C
125˚
(C
25˚C
0 .5
1
5
0
0
0.2
0.4
125
as
0.6
25˚C
1
0.8
–55˚C
e
(Case
)
Temp
)
1. 0
1.2
1.4
C ol l ec t or C ur r en t I
C
( A)
B a s e - E m i tt o r Vo l ta g e V
B E
( V )
h
FE
– I
C
Temperature Characteristics
(Typical)
(V
C E
= 4 V )
50
D C C ur re n t Gai n h
F E
Sw i t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
1 25 ˚ C
25 ˚ C
3
t
o n
•t
s t g
• t
f
– I
C
Characteristics
(Typical)
Transient Thermal Resistance
θ
j- a
( ˚C / W )
5
V
CC
2 0 0 V
I
C
:I
B1
: I
B 2
= 1 0: 1: – 2
t
s tg
1
0 .5
t
on
t
f
0 .1
0.1
0.5
1
3
θ
j- a
– t Characteristics
– 55 ˚ C
1
10
5
0.01
0.05
0.1
0 .5
1
5
0. 5
0. 4
1
10
Time t(ms)
100
10 0 0
Co l l ect o r C u rren t I
C
(A )
Co l l ec to r C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
10
Reverse Bias Safe Operating Area
20
10
30
P c – Ta Derating
5
Co lle ct o r C u r r e n t I
C
( A )
0
µ
s
5
Co llec t o r C u r r e n t I
C
( A)
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
W
ith
20
In
fin
ite
he
at
si
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=–0.5A
Duty:less than 1%
nk
0.5
Without Heatsink
Natural Cooling
0 .5
10
W i th o u t H e a t s i n k
2
0.1
5
10
50
10 0
500
0 .1
5
10
50
10 0
5 00
0
0
25
50
75
100
125
150
Co l l ec t or - Emi t te r V ol ta ge V
C E
(V)
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V )
Am b i e n t T em p er at u r e T a ( ˚ C )
116
SANKEN [ SANKEN ELECTRIC ]
