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2SC5002 参数 Datasheet PDF下载

2SC5002图片预览
型号: 2SC5002
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(显示水平偏转输出,开关稳压器和通用) [Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)]
分类和应用: 晶体稳压器开关晶体管
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC5002
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5002
1500
800
6
7(
Pulse
14)
3.5
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25°C)
2SC5002
100
max
1
max
100
max
800
min
8
min
4 to 9
5
max
1.5
max
4
typ
100
typ
Unit
µ
A
mA
µ
A
V
s
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=1200V
V
CB
=1500V
V
EB
=6V
I
C
=10mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=5A
I
C
=5A, I
B
=1.2A
I
C
=5A, I
B
=1.2A
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
23.0
±0.3
9.5
±0.2
a
b
V
V
MHz
pF
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
4.4
1.5
0.65
+0.2
-0.1
3.3
0.8
3.35
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
50
I
C
(A)
4
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.8
I
B2
(A)
–1.6
t
stg
(
µ
s)
4.0
max
t
f
(
µ
s)
0.2
max
1.5
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c to r - E m i t t er S a tu r a t i o n Vo lt a g e V
CE (sat)
( V )
7
A
1.5
V
CE
(sat)–I
C
Characteristics
(Typical)
3
( I
C
: I
B
= 5 : 1)
I
C
– V
B E
Temperature Characteristics
(Typical)
7
( V
CE
=5 V )
1 .2 A
6
C o l l e c t o r C u r r e nt I
C
( A )
70 0m A
6
5
2
Co l l e c t o r Cu r r e n t I
C
( A)
4
400 mA
4
mp)
mp)
e Te
ase Te
200 mA
1
1
0
0
1
2
3
4
0
0.02
0. 1
0 .5
1
5
10
0
0
0.5
125˚
C
I
B
=10 0m A
–30˚C
(C
2
25˚C (C
2
ase Te
m
3
(Cas
p)
1.0
3.0
1 .5
Co l l ect o r - Em i tte r V ol ta ge V
C E
( V)
C o ll e ct o r Cu r r e nt I
C
( A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
h
FE
– I
C
Characteristics
(Typical)
(V
C E
=5 V)
100
S wi t c hi n g T i m e
t
s tg •
t
f
(
µ
s )
D C C u r r e n t Gai n h
FE
50
20
10
5
t
s tg
•t
f
– I
C
Characteristics
(Typical)
Transient Thermal Resistance
θ
j- a
( ˚C / W )
.
V
C C
= 20 0V
.
I
C
: I
B 1
: –I
B2
= 5 : 1: 2
3
θ
j- a
– t Characteristics
125˚ C
t
st g
25 ˚C
1
10
5
– 3 0 ˚C
1
0 .5
t
f
0.5
2
0.02
0.05
0. 1
0 .5
1
5
7
0 .1
0 .2
0 .5
1
5
7
0.1
1
10
10 0
Time t(ms)
1 0 0 0 20 0 0
Co l le ct or Curre nt I
C
(A )
Co l le c to r C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
20
100µs
Reverse Bias Safe Operating Area
20
80
Pc – Ta Derating
10
Co lle cto r C u r r e n t I
C
( A )
Co lle cto r C ur re n t I
C
( A)
M ax im u m P o we r Di s s i p a t i o n P
C
( W )
10
5
60
W
ith
In
fin
ite
he
5
40
at
si
nk
1
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
Without Heatsink
Natural Cooling
0.5
20
W i t ho u t H ea t s i nk
1
100
50 0
C ol l e ct or - Em i tt er Vo l t ag e V
C E
(V )
1000
0.1
50
10 0
5 00
1 0 00
20 0 0
3. 5
0
0
50
100
150
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m p er at u r e T a ( ˚ C )
122