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2SC5124 参数 Datasheet PDF下载

2SC5124图片预览
型号: 2SC5124
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(显示水平偏转输出,开关稳压器和通用) [Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)]
分类和应用: 晶体稳压器开关晶体管局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SC5124
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5124
1500
800
6
10(
Pulse
20)
5
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25°C)
2SC5124
100
max
1
max
100
max
800
min
8
min
4 to 9
5
max
1.5
max
3
typ
130
typ
Unit
µ
A
mA
µ
A
V
s
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=1200V
V
CB
=1500V
V
EB
=6V
I
C
=10mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=8A
I
C
=8A, I
B
=2A
I
C
=8A, I
B
=2A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
23.0
±0.3
9.5
±0.2
a
b
V
V
MHz
pF
19.1
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
4.4
1.5
0.65
+0.2
-0.1
3.3
0.8
3.35
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
33.3
I
C
(A)
6
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
1.2
I
B2
(A)
–2.4
t
on
(
µ
s)
0.1typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
0.2typ
1.5
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
2.4
V
CE
(sat)–I
C
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s at)
( V )
3
I
C /
I
B
= 5 :1
C o l l ec t or C u r r e n t I
C
( A )
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
CE
=5 V )
10
1 .8 A
8
C ol l e c t o r C u r r e nt I
C
( A)
8
1 .2 A
2
6
70 0m A
6
4
30 0m A
4
1
2
I
B
=100m A
2
0
0
1
2
3
4
0
0.02
0.05
0 .1
0. 5
1
5
10
0
0
0.5
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
1 .0
Co l l ect o r - Em i t te r V ol ta ge V
C E
(V)
C o ll e ct o r C u r r e nt I
C
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= 5 V )
40
D C C ur r e n t Gai n h
F E
S w i t c hi n g T i m e
t
o n•
t
st g•
t
f
(µ s)
1 25 ˚C
2 5˚ C
10
5
t
s t g
•t
f
– I
C
Characteristics
(Typical)
t
s tg
θ
j - a
– t Characteristics
V
C C
2 00 V
I
C
: I
B 1
: – I
B 2
= 5 : 1: 2
1
0.5
t
f
0.1
0.2
10
– 55 ˚ C
5
3
0.02
0.1
0.5
1
5
10
0. 5
1
C o ll e ct o r Cu r r e nt I
C
( A)
5
10
Co l l ect o r Cur ren t I
C
(A)
Safe Operating Area
(Single Pulse)
30
30
Reverse Bias Safe Operating Area
100
P c – Ta Derating
10
Col lec to r Cu r r e n t I
C
(A )
5
10
Co llec to r C u r r e n t I
C
(A )
5
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
50
1
0.5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
0.1
5
10
50
10 0
5 00
1000
Col l e ct o r- Em i t ter Vo l t ag e V
C E
( V)
0.1
50
10 0
500
10 00
20 00
3.5
0
W i t ho u t H ea t s i nk
0
25
50
75
100
12 5
1 50
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( ˚ C )
128
3.0
10
0
µ
s
W
ith
In
fin
ite
he
at
si
nk