2SC5249
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5249
600
600
7
3(
Pulse
6)
1.5
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Switching Regulator and General Purpose
(Ta=25°C)
2SC5249
100
max
100
max
600
min
20 to 40
0.5
max
1.2
max
6
typ
50
typ
V
V
MHz
pF
13.0min
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=600V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=–0.3A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
Unit
µ
A
V
16.9
±0.3
8.4
±0.2
µ
A
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(Ω)
200
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(A)
0.1
I
B2
(A)
–0.1
t
on
(
µ
s)
1.0
max
t
stg
(
µ
s)
19
max
t
f
(
µ
s)
1.0
max
2.54
3.9
B C E
I
C
– V
CE
Characteristics
(Typical)
C o l l ec t or - Em i t t e r Sa t ur at i on V ol t ag e V
C E(s at)
( V )
3
300mA
V
CE
(sat)–I
C
Characteristics
(Typical)
0.5
I
C /
I
B
= 5 Co ns t .
I
C
– V
B E
Temperature Characteristics
(Typical)
3
( V
CE
= 4V )
20 0m A
C ol l e c t o r C ur r en t I
C
( A)
C o l l e c t o r C u r r e nt I
C
( A)
2
100 mA
2
p)
mp)
e Te
25˚C
(Cas
Cas
e
1
I
B
=20mA
25˚C (Case Temp)
–55˚C (Case Temp)
1
˚C
(
0
0
1
2
3
4
0
0.01
0.05
0.1
0 .5
1
3
0
0
0 .5
Ba s e - E m i t to r V o l t a ge V
BE
( V)
–55˚C
125
(Case
Temp
50m A
Tem
)
125˚C (Case Temp)
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
1.0
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V )
C ol l ec t or C ur r en t I
C
( A)
h
FE
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
200
125˚ C
D C C ur re n t Gai n h
FE
100
25˚ C
50
–55˚ C
S wi t c hi n g T i m e
t
on•
t
st g•
t
f
(
µ
s )
30
t
o n
•t
s t g
•t
f
– I
C
Characteristics
(Typical)
Transient Thermal Resistance
θ
j-a
( ˚ C / W )
3
θ
j - a
– t Characteristics
t
s tg
10
V
CC
2 0 0 V
5 I
C
:I
B 1
:– I
B2
= 10 : 1: 1
t
on
1
0 .5
0 .2
0 .1
t
f
1
10
5
0.01
0. 5
0 . 05
0. 1
0.5
1
3
0.5
1
3
0. 3
1
10
Time t(ms)
10 0
1 0 00
C o ll e ct o r C u rren t I
C
(A )
C ol l ec t or C ur r en t I
C
( A)
Safe Operating Area
(Single Pulse)
7
5
100
µ
s
Reverse Bias Safe Operating Area
7
5
M ax im um P o we r Di s s i pa t i o n P
C
( W )
30
35
Pc – Ta Derating
W
ith
Co llec to r C u r r e n t I
C
( A )
C olle c tor C u r r e n t I
C
( A )
In
fin
1
1
ite
20
he
at
0.5
0.5
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=–1.0A
Duty:less than 1%
si
nk
Without Heatsink
Natural Cooling
0.1
10
0.1
W i t h o u t H e a ts i n k
0.05
10
50
1 00
50 0
0 .0 5
10
50
1 00
50 0
2
0
0
25
50
75
100
12 5
15 0
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V)
Col l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( ˚ C )
131
SANKEN [ SANKEN ELECTRIC ]
