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2SD2015 参数 Datasheet PDF下载

2SD2015图片预览
型号: 2SD2015
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面型晶体管(用于驱动电磁阀,继电器,电机和通用) [Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)]
分类和应用: 晶体继电器晶体管电机驱动
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Darlington
2SD2015
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=6V
I
C
=10mA
V
CE
=2V, I
C
=2A
I
C
=2A, I
B
=2mA
I
C
=2A, I
B
=2mA
V
CE
=12V, I
E
=–0.1A
V
CB
=10V, f=1MHz
2SD2015
10
max
10
max
120
min
2000
min
1.5
max
2.0
max
40
typ
40
typ
V
V
MHz
pF
13.0min
Equivalent
circuit
B
C
(3kΩ) (500Ω) E
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2015
150
120
6
4
0.5
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Driver for Solenoid, Relay and Motor and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM20(TO220F)
4.0
±0.2
10.1
±0.2
4.2
±0.2
2.8 c0.5
µ
A
V
16.9
±0.3
8.4
±0.2
mA
1.35
±0.15
1.35
±0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
±0.2
2.4
±0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
20
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
5.0typ
t
f
(
µ
s)
2.0typ
2.54
3.9
B C E
±0.2
0.8
±0.2
a
b
ø3.3
±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
1
mA
V
CE
(sat) – I
B
Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
( V
CE
=4 V )
4
4
I
B
=
0.8mA
0.6mA
C ol l e c t o r C ur r en t I
C
( A)
0.4mA
2
Co l l e c t o r Cu r r e n t I
C
( A )
3
0.5mA
3
e Te
mp)
mp)
ase Te
25˚C (C
2
2
125
˚C (
Cas
0.3mA
I
C
= 4 A
1
1A
2A
3A
1
1
0
0
1
2
3
4
5
6
0
0 .2
1
5
10
50
10 0
0
0
1
Ba s e- E m i t t or V o l t a ge V
B E
( V )
–30˚C (C
a
se Temp
)
2
C ol l e ct or - Em it t er Vo l t ag e V
C E
( V)
Bas e C u r r e nt I
B
( m A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
20000
10000
D C C ur r e n t Gai n h
F E
5000
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
CE
= 4 V )
20000
10000
D C C ur re n t Gai n h
FE
5000
12
5˚C
Transient Thermal Resistance
θ
j -a
( ˚C /W )
θ
j - a
– t Characteristics
5
Typ
1000
500
1000
500
25
˚C
–3
0˚C
1
100
50
0.03
0. 1
0 .5
1
4
100
50
0 . 0 3 0 .0 5
0 .1
0 .5
1
4
0. 5
1
5
10
50
T i m e t( m s )
1 00
500 1000
C ol l ec t or Cu rre nt I
C
(A )
Co l le c to r Cu r r e n t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
60
10
5
50
Cu t-o ff F r e q u e nc y f
T
( M H
Z
)
C olle c to r C u r r e n t I
C
( A )
Safe Operating Area
(Single Pulse)
30
100ms
DC
10
Pc – Ta Derating
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
20
W
ith
In
1m
m
s
30
s
0
µ
s
40
Typ
30
1
0 .5
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
fin
150x150x2
1 00x
1 0
10
0x
2
ite
he
at
20
si
nk
0 .1
10
0.05
0
–0.02
0.03
–0.0 5 –0 . 1
–0 .5
–1
–4
5
Without Heatsink
Natural Cooling
50x50x2
Without Heatsink
2
10
50
1 00
2 00
0
0
25
50
75
1 00
125
150
Emi t t e r C urre nt I
E
(A )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
140