Equivalent circuit
C
Darlington
2SD2439
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=7mA
I
C
=7A, I
B
=7mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
2SD2439
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
55
typ
95
typ
V
V
MHz
pF
16.2
B
( 7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1588)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2439
160
150
5
10
1
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
R
L
(Ω)
10
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
7
I
B2
(mA)
–7
t
on
(
µ
s)
0.5typ
t
stg
(
µ
s)
10.0typ
t
f
(
µ
s)
1.1typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
CE (s at)
(V )
10mA
2.
5m
A
V
CE
(sat) – I
B
Characteristics
(Typical)
3
I
C
– V
B E
Temperature Characteristics
(Typical)
10
( V
C E
=4 V )
10
A
2m
1 .5 m A
8
Co l l e c t o r Cu r r e n t I
C
( A )
1. 2m A
1mA
8
C o l l e c t o r C u r r e nt I
C
( A)
2
6
0.8m A
6
I
C
= 1 0A
I
C
= 7A
1
I
C
= 5A
p)
Tem
se
e Te
125
25˚C
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
–30˚
2
2
C (C
I
B
=0.4mA
˚C
(Cas
(Ca
ase
Tem
4
0.6mA
4
mp)
p)
2
Co ll e ct o r -Em i t t er V ol tag e V
C E
(V )
Ba se Cu r r e nt I
B
( m A)
Ba s e - E m i t to r V ol t ag e V
B E
( V)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= 4 V )
40000
DC Cu r r en t G a i n h
FE
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= 4V )
70000
50000
1 25 ˚ C
Transient Thermal Resistance
θ
j-a
( ˚ C/ W )
3
θ
j - a
– t Characteristics
Typ
10000
5000
D C C u r r en t G ai n h
FE
1
0.5
10000
5000
25 ˚ C
–3 0˚ C
1000
1000
02
0.5
1
C ol l e ct or C ur ren t I
C
(A )
5
10
500
0 .2
0 .5
1
C ol l ec t or C ur r e nt I
C
( A)
5
10
0.1
1
5
10
50 100
Time t(ms)
5 00 10 0 0 2 0 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
100
30
Safe Operating Area
(Single Pulse)
80
10
m
Pc – Ta Derating
80
Cu t-o ff Fre qu e n c y f
T
(M H
Z
)
Co lle cto r C u r re n t I
C
( A )
10
5
DC
10
0m
M ax im um P o we r Di s s i pa t i o n P
C
( W )
s
s
60
60
Typ
1
0 .5
Without Heatsink
Natural Cooling
0 .1
40
40
20
20
Without Heatsink
5
10
50
10 0
20 0
3.5
0
0
50
100
15 0
0
–0.02
– 0. 1
–1
Em i t t er C u rren t I
E
(A)
–10
0.05
3
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
A m b i en t T e m p e r a tu r e T a ( ˚ C )
152
3.0
2. 5
W
ith
In
fin
ite
he
at
si
nk
SANKEN [ SANKEN ELECTRIC ]
