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2SD2493 参数 Datasheet PDF下载

2SD2493图片预览
型号: 2SD2493
PDF下载: 下载PDF文件 查看货源
内容描述: 硅NPN三重扩散平面晶体管(音频,系列稳压器和通用) [Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)]
分类和应用: 晶体稳压器晶体管
文件页数/大小: 1 页 / 28 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
Equivalent circuit
C
Darlington
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2493
110
110
5
6
1
60(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
2SD2493
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
2SD2493
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
V
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
B
(70
)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1624)
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
5.0
±0.2
External Dimensions
MT-100(TO3P)
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
0.65
+0.2
-0.1
1.4
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(Ω)
6
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
5
I
B2
(mA)
–5
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
6.2typ
t
f
(
µ
s)
1.1typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
1m
V
CE
(sat) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4V )
6
5mA
0.
5
mA
0 .4 m A
0. 3m A
C o l l ec to r C u r r e n t I
C
( A)
4
0.2m A
C o l l ec t or C u r r e n t I
C
( A )
2
4
Tem
p)
Cas
e
I
C
= 5A
2
1
I
C
= 3A
2
e Tem
25˚C
(Cas
˚C (
I
B
=0.1mA
0
0
2
4
6
0
0.1
0.5
1
5
10
50
100
0
0
1
–30˚C
125
(Case
p)
Temp
)
2
2.5
Col l e ct or - Em it t er V ol ta ge V
C E
(V)
Ba se Cu r r e nt I
B
( m A)
B a s e - E m i t t o r Vo l ta g e V
B E
( V )
(V
C E
= 4 V )
40000
D C Cu rr en t G ai n h
FE
D C C u r r e n t G ai n h
FE
40000
( V
C E
= 4V)
Transient Thermal Resistance
θ
j-a
(˚ C/ W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
5
Typ
10000
5000
10000
5000
12 5 ˚ C
25 ˚ C
1000
500
–3 0˚ C
1
1000
500
200
0.02
0.5
1
5
10
5 0 10 0
Time t(ms)
50 0 1 0 0 0 20 0 0
0. 1
0.5
1
5 6
100
0.02
0. 1
0 .5
1
56
C ol l ec t or C u rre nt I
C
(A )
C ol l ec t or C ur r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
20
Safe Operating Area
(Single Pulse)
60
Pc – Ta Derating
Typ
10
5
10
60
Co lle ct o r C u r r e n t I
C
( A)
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
W
m
D
s
C
ith
0m
s
40
In
fin
ite
he
40
1
0.5
at
si
nk
20
20
Without Heatsink
Natural Cooling
0.1
Without Heatsink
5
10
50
10 0
20 0
3. 5
0
0
25
50
75
100
125
150
0
–0.02
–0 . 1
–1
–6
0 .0 5
3
Em i t t e r Cu rre nt I
E
( A)
C ol l ec t or - Em i t te r Vol t ag e V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
153