N-Channel MOS FET
FKP202
Characteristic Curves
Re(y fs)-ID C ha r a ct er ist ics (t y pica l)
100
VDS=10V
10000
March. 2007
(Tc=25℃)
C a pa cit a nce-VDS C ha r a ct er ist ics (t y pica l)
f=1MHz
VGS=0V
Ciss
10
Capacitance (pF)
Tc=-55℃
Re(yfs) (S)
1
25℃
125℃
1000
Coss
100
Crss
0.1
0.01
0.01
10
0.1
1
ID (A)
10
100
0
10
20
VDS (V)
30
40
50
IDR-VS D C ha r a ct er ist ics (t y pica l)
45
40
35
30
10
100
1000
S AFE O PERAT I N G AREA
ID(pulse) max
ID max
100μs
IDR (A)
ID (A)
25
20
15
10
5
0
0.0
0.5
VSD (V)
1.0
1.5
VGS=0V
10V
RDS(on) LIMITED
1
1ms
10ms
0.1
Tc=25℃
1shot
DC
0.01
0.1
1
10
VDS (V)
100
1000
P D-Ta C ha r a ct er ist ics
50
40
With infinite heatsink
30
PD (W)
20
10
Without heatsink
0
0
50
Ta (℃)
100
150
.
Sanken Electric Co., Ltd.
T02-006EA-070227
4/9
SANKEN [ SANKEN ELECTRIC ]
