N-Channel MOS FET
FKP300A
■Features
●Low
on-resistance
●Low
input capacitance
●Avalanche
energy capability guaranteed
June
, 2007
■Package---
FM100 (TO-3P Full Mold)
■Applications
●PDP
driving
●High
speed switching
■Equivalent
circuit
D (2)
G (1)
S (3)
■Absolute
maximum ratings
(Ta=25°C）
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
Channel Temperature
Storage Temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
P
D
E
AS *
2
I
AS
T
ch
T
stg
Rating
300
±30
±30A
±120A
85 (Tc=25°C)
400
30
150
－55
to 150
Unit
V
V
A
A
W
mJ
A
°C
°C
*1 PW≤100μs，duty cycle≤1%
*2 V
DD
=20V, L=830μH，I
Lp
=30A, unclamped, R
G
=50Ω, See Fig.1
Sanken Electric Co., Ltd.
http://www.sanken-ele.co.jp/en/
T02-010EA-070531
SANKEN [ SANKEN ELECTRIC ]
