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FMX-G22S 参数 Datasheet PDF下载

FMX-G22S图片预览
型号: FMX-G22S
PDF下载: 下载PDF文件 查看货源
内容描述: 硅二极管 [Silicon Diode]
分类和应用: 整流二极管局域网超快恢复二极管快速恢复二极管
文件页数/大小: 4 页 / 203 K
品牌: SANKEN [ SANKEN ELECTRIC ]
 浏览型号FMX-G22S的Datasheet PDF文件第2页浏览型号FMX-G22S的Datasheet PDF文件第3页浏览型号FMX-G22S的Datasheet PDF文件第4页  
SANKEN ELECTRIC CO., LTD.
FMX-G22S
1. Scope
The present specifications shall apply to Sanken silicon diode, FMX-G22S.
2. Outline
Type
Structure
Applications
Silicon Diode
Resin Molded
Flammability: UL94V-0 (Equivalent)
High Frequency Rectification,etc.
3. Absolute maximum ratings
No.
1
2
3
4
5
6
7
8
Item
Transient Peak Reverse Voltage
Peak Reverse Voltage
Average Forward Current
Peak Surge Forward Current
I
2
t Limiting Value
Junction Temperature
Storage Temperature
Dielectric Strength
Symbol
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
Tj
Tstg
Unit
V
V
A
A
A
2
s
°C
°C
kV
Rating
200
200
10
150
112.5
40∼ + 150
40∼ + 150
A.C. 1.0
Junction and case (1min.)
Tc=97°C, sinewave
10msec.
10msec. half sinewave, one shot
Conditions
4. Electrical characteristics (Ta=25°C, unless otherwise specified)
No.
1
2
3
Item
Forward Voltage Drop
Reverse Leakage Current
Reverse Leakage Current
Under High Temperature
Reverse Recovery Time
trr2
5
Thermal Resistance
Rth
(j-c)
ns
°C/W
25 max.
4.0 max.
Symbol
V
F
I
R
H�½�I
R
trr1
4
Unit
V
µA
mA
ns
Value
0.98 max.
200 max.
50 max.
30 max.
I
F
=10A
V
R
=V
RM
V
R
=V
RM
,Tj=150°C
I
F
=I
RP
=500mA, Tj=25
°C
90% Recovery point
I
F
=500mA, I
RP
=1A, Tj=25
°C
75% Recovery point
Conditions
Between Junction and case.
030901
1/4
61426-01