Darlington transistors with
built-in temperature compensation diodes
for audio amplifier applications
SAP
series
Features
qBuilt-in
temperature compensation diodes and one emitter resistor
qReal
time temperature compensation
The temperature compensation diodes are mounted on one chip and placed in the center of the chip to
detect temperature rises directly.
qElimination
of the temperature dependency of the idling current
The temperature coefficient of the diodes is optimized to have the idling current stabilized; thus one of
the fatal failure modes in conventional Darlington transistors, Thermal Runaway, is avoidable.
qSymmetrical
design for the PNP and the NPN pinouts
The new design minimizes the length of the pattern layout, and output distortions are controlled.
qDarlington
transistors, temperature compensation diodes and one emitter resistor are
incorporated in one package, so labor for parts insertion as well as the parts count is
reduced.
Line up
Part Number
SAP15P/SAP15N
SAP10P/SAP10N
SAP08P/SAP08N
P
C
(W)
150
100
80
V
CEO
(V )
160
150
150
I
C
(A)
15
12
10
h
FE
5000 to 20000
5000 to 20000
5000 to 20000
Emitter resistor (Ω)
0.22
0.22
0.22
sExternal
Dimentions
(Unit : mm)
15.4
±
0.3
9.9
±
0.2
3.2
±
0.2
5
±
0.2
4.5
±
0.2
1.6
±
0.2
sEquivalent
Circuit Diagram
NPN
C
D
B
R :70Ω Typ.
PNP
E
Emitter resistor
R
E
: 0.22Ω Typ.
3.3
±
0.2
3.4max
a
b
2
±
0.1
(36°)
7
±
0.2
±
0.3
22
23
±
0.3
28
±
0.3
S
S
D
R: 70Ω Typ.
Emitter resistor
R
E
: 0.22Ω Typ.
B
1
±
0.1
(41)
(2.5)
0.65
–0.1
0.8
–0.1
+0.2
+0.2
2.54
±
0.1
3.81
±
0.1
(7.62)
(12.7)
17.8
±
0.3
4
±
0.1
2.54
±
0.1
3.81
±
0.1
(18)
1.35
–0.1
+0.2
E
C
0.65
–0.1
+0.2
Weight: approx 8.3g
a. Part Number
b. Lot Number
BD C S E
E S C D B
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