SAPM01N
１
Scope
The present specifications shall apply to Sanken silicon power MOSFET with built-in
temperature compensation diodes, SAPM01N, a complementary device of the SAPM01P,
for audio amplifier applications.
２
Appearance and outline drawings
２-１
Appearance
The body shall be clean and shall not bear any stain, rust or flaw.
２-２
Outline drawings
Refer to Fig.1
２-３
Marking
The type number and lot number shall be marked by white-ink on the body and shall not be
erased easily.
３
Ratings
３-１
Absolute Maximum Ratings (Ta=25℃)
SAP M01N
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Diode Forward Current
Channel Temperature
Storage Temperature
※1
P
W
≦100μsec,
duty cycle≦1%
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
※
1
P
D
D
i
I
F
T
ch
T
stg
Ratings
150
±20
±20
±80
150 (Tc=25℃)
10
150
-40�½�＋150
Unit
V
V
A
A
W
mA
℃
℃
030416
SSE-22334
1／9
61432
SANKEN [ SANKEN ELECTRIC ]
