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SI-3050KD 参数 Datasheet PDF下载

SI-3050KD图片预览
型号: SI-3050KD
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装低消耗电流低压差电压线性稳压器IC [Surface-Mount Low Current Consumption Low Dropout Voltage Linear Regulator ICs]
分类和应用: 线性稳压器IC
文件页数/大小: 3 页 / 65 K
品牌: SANKEN [ SANKEN ELECTRIC ]
 浏览型号SI-3050KD的Datasheet PDF文件第2页浏览型号SI-3050KD的Datasheet PDF文件第3页  
1-1-1 Linear Regulator ICs
SI-3000KD Series
■Features
Surface-Mount, Low Current Consumption, Low Dropout Voltage Linear Regulator ICs
■Absolute
Maximum Ratings
Parameter
DC Input Voltage
DC Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance (Junction to Ambient Air)
Thermal Resistance (Junction to Case)
Symbol
Ratings
SI-3012KD/3033KD
17
1.0
3
–30 to +125
–30 to +125
33.3
3
SI-3010KD/3050KD
35
*1
(T
a
=25°C)
Unit
• Compact surface-mount package (TO263-5)
• Output current: 1.0A
• Low dropout voltage: V
DIF
0.6V (at I
O
= 1.0A)
• Low circuit current consumption: Iq
350
µ
A
(600
µ
A for SI-3010KD, SI-3050KD
• Low circuit current at output OFF: Iq (OFF)
1
µ
A
• Built-in overcurrent, thermal protection circuits
• Compatible with low ESR capacitors (SI-3012KD
and SI-3033KD)
V
IN
I
O
P
D*2
T
j
T
stg
θ
j-a
θ
j-c
V
A
W
°C
°C
°C/W
°C/W
*1: A built-in input-overvoltage-protection circuit shuts down the output voltage at the Input Overvoltage Shutdown Voltage
of the electrical characteristics.
*2: When mounted on glass-epoxy board of 1600mm
2
(copper laminate area 100%).
■Applications
• Secondary stabilized power supply (local power supply)
■Electrical
Characteristics 1 (Low V
O
type compatible with low ESR output capacitor)
Ratings
(T
a
=25°C, V
C
=2V unless otherwise specified)
SI-3033KD
Unit
max.
*4
Parameter
Input Voltage
Output Voltage
(Reference Voltage for SI-3012KD)
Line Regulation
Load Regulation
Symbol
min.
V
IN
V
O
(V
ADJ
)
Conditions
∆V
OLINE
Conditions
∆V
OLOAD
Conditions
V
DIF
Conditions
Conditions
2.4
*3
1.24
SI-3012KD (Variable type)
typ.
1.28
V
IN
=3.3V, I
O
=10mA
15
V
IN
=3.3 to 8V, I
O
=10mA (V
O
=2.5V)
40
V
IN
=3.3V, I
O
=0 to 1A (V
O
=2.5V)
0.4
I
O
=0.5A (V
O
=2.5V)
0.6
I
O
=1A (V
O
=2.5V)
350
V
IN
=3.3V, I
O
=0A, V
C
=2V, R2=2.4kΩ
1
V
IN
=3.3V, V
C
=0V
±0.3
T
j
=0 to 100°C (V
O
=2.5V)
55
V
IN
=3.3V, f=100 to 120H
Z
, I
O
=0.1A (V
O
=2.5V)
1.1
V
IN
=3.3V
2
0.8
40
V
C
=2V
–5
0
V
C
=0V
–5
2
1.1
max.
*4
min.
*3
typ.
3.300
V
IN
=5V, I
O
=10mA
V
V
mV
mV
1.32
3.234
3.366
15
V
IN
=5 to 10V, I
O
=10mA
50
V
IN
=5V, I
O
=0 to 1A
0.4
I
O
=0.5A
0.6
I
O
=1A
350
V
IN
=5V, I
O
=0A,V
C
=2V
1
V
IN
=5V, V
C
=0V
±0.3
T
j
=0 to 100°C
55
V
IN
=5V, f=100 to 120H
Z
, I
O
=0.1A
V
IN
=5V
0.8
40
V
C
=2V
0
V
C
=0V
Dropout Voltage
V
Quiescent Circuit Current
Circuit Current at Output OFF
Temperature Coefficient of
Output Voltage
Ripple Rejection
Overcurrent Protection Starting
Current
*1
Control Voltage (Output ON)
*2
Control Voltage (Output OFF)
V
C
Terminal
Control Current (Output ON)
Control Current (Output OFF)
I
q
Conditions
I
q
(OFF)
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
Conditions
I
S1
Conditions
V
C
, IH
V
C
, IL
I
C
, IH
Conditions
I
C
, IL
Conditions
µ
A
µ
A
mV/°C
dB
A
V
µ
A
µ
A
*1:
*2:
*3:
*4:
I
S1
is specified at the 5% drop point of output voltage V
O
under the condition of Output Voltage parameter.
Output is OFF when the output control terminal (V
C
terminal) is open. Each input level is equivalent to LS-TTL level. Therefore, the device can be driven directly by LS-TTLs.
Refer to the Dropout Voltage parameter.
V
IN
(max) and I
O
(max) are restricted by the relation P
D
= (V
IN
- V
O
)
×
I
O
. Please calculate these values referring to the Copper laminate area vs. Power dissipation data.
20
ICs