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STA203A 参数 Datasheet PDF下载

STA203A图片预览
型号: STA203A
PDF下载: 下载PDF文件 查看货源
内容描述: 1.2A 3电路双向可控硅阵列 [1.2A 3 circuits Triac Array]
分类和应用: 栅极触发装置可控硅三端双向交流开关
文件页数/大小: 2 页 / 58 K
品牌: SANKEN [ SANKEN ELECTRIC ]
 浏览型号STA203A的Datasheet PDF文件第2页  
1.2A 3 circuits Triac Array
STA203A
s
Features
q
1.2A 3 Triacs combined one package
q
Repetitive peak off-state voltage: V
DRM
=400V
11.3
±
0.2
External Dimensions
(Unit: mm)
20.2
±
0.2
4.0
±
0.2
q
RMS on-state current: I
T(RMS)
=1.2A
q
Gate trigger current: I
GT
=3mA max (MODE , ,
2.3
±
0.2
9.0
±
0.2
a
b
4.7
±
0.5
)
1.0
±
0.25
C1.5
±
0.5
1
0.5
±
0.15
7
!
2.54=17.78
±
0.25
2.54
0.5
±
0.15
1.2
±
0.2
3
TR
1
2
1
4
5
TR
2
6
8
TR
3
7
2
3
4
5
6
7
8
T
1
G
T
2
G
T
2
G
T
2
T
1
a. Part Number
b. Lot Number
Weight: Approx. 2.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
RMS on-state current
Surge on-state current
Peak gate voltage
Peak gate current
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Symbol
V
DRM
I
T(RMS)
I
TSM
V
GM
I
GM
P
GM
P
G(AV)
Tj
Tstg
Ratings
400
1.2
10
6
0.5
1
0.1
– 40 to
+
125
– 40 to
+
125
Unit
V
A
A
V
A
W
W
°C
°C
Conditions
Conduction angle 360°, Tc=97°C
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C
sElectrical
Characteristics
Parameter
Off-state current
On-state voltage
(Tj=25°C, unless otherwise specified)
Symbol
I
DRM
V
TM
Ratings
min
typ
0.1
max
1.0
0.1
1.6
2.0
3.5
1.2
1.2
3.0
3.0
3.0
0.7
0.8
2.0
2.0
1.8
2.3
13.0
0.1
5.0
20.0
Unit
mA
V
Conditions
V
D
=V
DRM
, R
GK
=
, Tj=125
°C
V
D
=V
DRM
, R
GK
=
, Tj=25
°C
Pulse test, I
TM
=1.6A
T
2
, G
V
V
D
=6V,
R
L
=10Ω,
T
C
=25
°C
T
2
, G
T
2
, G
T
2
, G
+
+
+
+
+
Gate trigger voltage
V
GT
+
+
T
2
, G
mA
V
D
=6V,
R
L
=10Ω,
T
C
=25
°C
T
2
, G
T
2
, G
T
2
, G
V
mA
°C/W
V
D
=1/2×V
DRM
, Tj=125
°C
V
D
=6V
Junction to case
Gate trigger current
I
GT
+
Gate non-trigger voltage
Holding current
Thermal resistance
V
GD
I
H
Rth
62