TO-220F 3A Thyristor
TF321S, TF341S, TF361S
s
Features
q
Repetitive peak off-state voltage: V
DRM
=200, 400, 600V
q
Average on-state current: I
T(AV)
=3A
q
Gate trigger current: I
GT
=15mA max
q
Isolation voltage: V
ISO
=1500V(50Hz Sine wave, RMS)
13.0 min
External Dimensions
(Unit: mm)
φ
3.3
±
0.2
8.4
±
0.2
4.0
±
0.2
10.0
±
0.2
4.2
±
0.2
C 0.5
2.8
16.9
±
0.3
0.8
±
0.2
a
b
±
1.35
0.15
±
0.15
1.35
+
0.2
0.85
–
0.1
+
0.2
0.45 –
0.1
±
0.2
3.9
±
0.2
2.54
2.2
±
0.2
2.54
2.4
(1). Cathode (K)
(2). Anode (A)
(3). Gate (G)
a. Part Number
b. Lot Number
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Non-repetitive peak off-state voltage
Non-repetitive peak reverse voltage
Average on-state current
RMS on-state current
Surge on-state current
Peak forward gate current
Peak forward gate voltage
Peak reverse gate voltage
Peak gate power loss
Average gate power loss
Junction temperature
Storage temperature
Isolation voltage
Symbol
V
DRM
V
RRM
V
DSM
V
RSM
I
T (AV)
I
T (RMS)
I
TSM
I
FGM
V
FGM
V
RGM
P
GM
P
G (AV)
Tj
Tstg
V
ISO
Ratings
TF321S
200
200
300
300
TF341S
400
400
500
500
3.0
4.7
60
2.0
10
5.0
5.0
0.5
– 40 to +125
– 40 to +125
1500
TF361S
600
600
700
700
Unit
V
V
V
V
A
A
A
A
V
V
W
W
°C
°C
V
Conditions
Tj= –40 to +125°C, R
GK
=1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc =93°C
50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C
f
f
f
50Hz, duty
50Hz
50Hz, duty
10%
10%
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical
Characteristics
Parameter
Off-state current
Reverse current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Critical rate-of-rise of off-state voltage
Turn-off time
Thermal resistance
Symbol
I
DRM
I
RRM
V
TM
V
GT
I
GT
V
GD
I
H
dv/dt
tq
Rth
Ratings
min
typ
max
2.0
2.0
1.4
0.7
3.0
0.1
5.0
50
30
5.0
1.5
15
Unit
mA
mA
V
V
mA
V
mA
V/µS
µS
°C/W
Conditions
Tj=125
°C,
V
D
=V
DRM
(V
RRM
), R
GK
=1kΩ
T
C
=25
°C,
I
TM
=5A
V
D
=6V, R
L
=10Ω, T
C
=25
°C
V
D
=1/2×V
DRM
, Tj=125
°C,
R
GK
=1kΩ
R
GK
=1kΩ, Tj=25
°C
V
D
=1/2×V
DRM
, Tj=125
°C,
R
GK
=1kΩ, C
GK
=0.033µF
Tc=25
°C
Junction to case
8
SANKEN [ SANKEN ELECTRIC ]
