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AK25GB80 参数 Datasheet PDF下载

AK25GB80图片预览
型号: AK25GB80
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 567 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号AK25GB80的Datasheet PDF文件第2页  
THYRISTOR MODULE
AK25GB40/80
UL;E76102 M
Power Thyristor Module
AK25GB
series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available, and electrically isolated mounting base make
your mechanical design easy.
Isolated mounting base
I
T AV
25A, I
T RMS
55A, I
TSM
55A
di/dt 100 A/ s
dv/dt 500V/ s
Applications
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
Unit
A
Maximum Ratings
Symbol
V
DRM
Symbol
I
T
I
T
AV
RMS
Tj 25
Item
Ratings
AK25GB40
400
Conditions
Single phase, half wave, 180 conduction, Tc 97
Tc 97
1
unless otherwise specified
Unit
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/ s
V
125
125
N
f
B
g
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage Forward
Peak Gate Voltage Reverse
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage R.M.S.
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting M6
Terminal M5
AK25GB80
800
Ratings
25
55
450/500
1000
10
1
3
10
5
I
TSM
I
2
t
P
GM
P
G
AV
50Hz/60Hz, peak value, non-reqetitive
Value for one cycle of surge current
2
cycle,
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
100mA Tj 25
A.C. 1 minute
V
D
1
2
V
DRM
dI
G
/dt
0.1A/ s
40
40
100
2500
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Typical Value
4.7 48
2.7 28
170
Electrical Characteristics
Symbol
I
DRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Rth j-c
Item
Repetitive Peak Off-State Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Thermal Impedance, max.
Conditions
at V
DRM
, Single phase, half wave, Tj 125
On-State Current 75A, Tj 125
Tj 25
Tj 125
Tj 125
Tj 25
Tj 25
Junction to case, per
1 2
Module
Junction to case, per 1 Module
I
T
1A V
D
6V
V
D
V
D
1
2
V
DRM
Ratings
8
1.50
50/3
0.25
Inst. measurement
Unit
mA
V
mA/V
V
s
V/ s
mA
mA
/W
I
T
25A I
G
100mA Tj 25
2
V
D
1
2
V
DRM
dI
G
/dt
0.1A/ s
10
500
50
100
0.80
0.40
3
V
DRM
Exponential wave.
63