THYRISTOR MODULE
AK55GB40/80
UL;E76102 M）
（
Power ThyristorModule
AK55GB
series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available, and electrically isolated mounting base make
your mechanical design easy.
Isolated mounting base
●
I
T AV）
55A, I
T RMS）
122A, I
TSM
1100A
（
（
●
di/dt 150 A/μs
●
dv/dt 500V/μs
（Applications）
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
G2
K2
A2�½�K1
3
1
93.5max
80
26max
3
2
1
K2
G2
2-
φ6.5
13
16.5
23
23
K1
G1
3-M5
110TAB
30max
A1K2
K1 G1
2
21
Unit：A
■Maximum
Ratings
Symbol
V
DRM
Symbol
（
I
T AV）
（
I
T RMS）
（Tj＝25℃
unless otherwise specified）
Item
Ratings
AK55GB40
400
Conditions
Single phase, half wave, 180°
conduction, Tc：89℃
Tc：89℃
1
cycle,
／
2
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
（Forward）
Peak Gate Voltage
（Reverse）
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage（R.M.S.）
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
AK55GB80
800
Ratings
55
122
1000/1100
5000
10
3
3
10
5
Unit
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
℃
℃
N�½��½�
（㎏f�½�B）
g
I
TSM
I
2
t
P
GM
（AV）
P
G
50Hz/60Hz, peak value, non-reqetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
＝100mA，
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
dI
μs
A.C. 1 minute
150
2500
−40
to
＋125
−40
to
＋125
4.7（48）
2.7（28）
170
Mounting（M6） Recommended Value 2.5-3.9（25-40）
Terminal（M5）
Recommended Value 1.5-2.5（15-25）
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-trigger Gate, Voltage, min
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ
Lutching Current, typ
Conditions
at V
DRM
, Single phase, half wave, Tj＝125℃
On-State Current 165A, Tj＝125℃Inst. measurement
Tj＝25℃，I
T
＝1A，V
D
＝6V
Tj＝125℃，V
D
＝
1 2
V
DRM
／
I
T
＝55A，
G
＝100mA，
I
Tj＝25℃，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
dI
μs
Tj＝125℃，V
D
＝
2 3
V
DRM
，Exponential
wave.
／
Tj＝25℃
Tj＝25℃
Junction to case, per
1 2
Module
／
Junction to case, per 1 Module
Ratings
20
1.35
100/3
0.25
10
500
50
100
0.50
0.25
Unit
mA
V
mA/V
V
μs
V/
μs
mA
mA
℃/W
Rth j-c） Thermal Impedance, max.
（
＊mark：Thyristor
and Diode part. No mark：Thyristor part
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
