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AK55GB80 参数 Datasheet PDF下载

AK55GB80图片预览
型号: AK55GB80
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 108 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号AK55GB80的Datasheet PDF文件第1页  
AK55GB40/80
Gate Characteristics
Peak Forward Gate Voltag
(10V)
Av
er
ag
e
On-State Voltage max
On-State Current
(A)
Gate Voltage
(V)
125℃
25℃
Peak Gate Current
(3A)
P
Po eak
we Ga
( te
r
10
W
Ga
te
Po
we
r
3W
Tj=125℃
ー1
Maximum Gate Voltage that will not trigger any unit
(0.25V)
05
10
15
20
25
30
Gate Current
(mA)
On-State Voltage
(V)
Allowable Case Temperature
(℃)
10
Average On-State Current Vs Power Dissipation
(Single phase half wave)
Per one element
D.C.
10
10
Average On-State Current Vs Maximum Allowable
Case Temperature
(Single phase half wave)
Per one element
2
360
Power Dissipation
(W)
10
360
10
: Conduction Angle
θ
θ
=120゜ =180゜
θ
=90゜
θ
=60゜
θ
=30゜
2
θ
=30゜
θ
=90゜
θ
=180゜
D.C.
θ
=60゜
θ
=120゜
: Conduction Angle
9 10
0 0
9 10
0 0
Average On-State Current
(A)
Transient Thermal Impedance
θ
(℃/W)
j-c
Average On-State Current
(A)
10
20
Surge On-State Current Rating
(Non-Repetitive)
Per one element
Tj=25℃ start
Transient Thermal Impedance
51
Junction to Case
Per one element
06
Surge On-State Current
(A)
10
00
80
60
40
20
60Hz
50Hz
05
04
03
02
01
10
ー3
5 1
ー2
Time
(cycles)
Time
t
sec)
5 1
ー1
5 1
0 
Total Power Dissipation
(W)
Conduction Angle 180°
W3
ld(Ar.m.s)
RMS)
Id
40
Rth:0.8C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
Rth:0.8C/W
Rth:0.6C/W
Rth:0.4C/W
Rth:0.2C/W
Rth:0.1C/W
10
10
θ
=30
θ
=60゜
10
θ
=90゜
θ
=120゜
θ
=180゜
30
20
W1
10
10
Id Ar.m.s.)
10
10
10
10
10
10
15
0 2 5 7 1 01 5
5 0 5 0 2
10
15
0 2 4 6 8 1 01 01 0
0 0 0 0 0 2 4
0 2 5 7 10 2
5 0 5 0 15
Output Current
(A)
Ambient Temperature
(℃)
Ambient Temperature
(℃)
RMS On-State Current
(A)
Allowable Case Temperature
(℃)
50
Allowable Case Temperature
(℃)
Output Current
W1 Bidirectional connection
W3 Three phase
bidiretional connection
RMS On-State Current Vs
Allowable Case Temperature
10