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AK90HB160 参数 Datasheet PDF下载

AK90HB160图片预览
型号: AK90HB160
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块 [THYRISTOR MODULE]
分类和应用:
文件页数/大小: 2 页 / 109 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号AK90HB160的Datasheet PDF文件第2页  
THYRISTOR MODULE
AK90HB120/160
UL;E76102 M)
Power ThyristorModule
AK90HB
series are designed for various rectifier circuits and
power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available.
Isolated mounting base
I
T AV)
90A, I
T RMS)
200A, I
TSM
1100A
di/dt 200 A/μs
dv/dt 500V/μs
93.5max
(Applications)
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
80
26max
3
2
1
K2
G2
2-
φ6.5
13
16.5
23
23
K1
G1
3-M5
110TAB
30max
G2
K2
A2�½�K1
3
1
A1K2
K1 G1
2
21
Unit:A
■Maximum
Ratings
Symbol
V
DRM
Symbol
I
T AV)
I
T RMS)
(Tj=25℃
unless otherwise specified)
Item
Ratings
AK90GB120
1200
Conditions
Single phase, half wave, 180°
conduction, Tc:88℃
Tc:88℃
1
cycle,
2
Repetitive Peak Off-State Voltage
Item
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
(Forward)
Peak Gate Voltage
(Reverse)
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
AK90GB160
1600
Ratings
90
200
1650/1800
15000
10
3
3
10
5
Unit
V
Unit
A
A
A
A
2
S
W
W
A
V
V
A/
μs
V
N�½��½�
(㎏f�½�B)
g
I
TSM
I
2
t
P
GM
(AV)
P
G
50Hz/60Hz, peak value, non-reqetitive
Value for one cycle of surge current
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
=100mA,
Tj=25℃,
D
1 2
V
DRM
G
/dt=0.1A/
V
dI
μs
A.C. 1 minute
200
2500
−40
to
+125
−40
to
+125
4.7(48)
2.7(28)
170
Mounting(M6) Recommended Value 2.5-3.9(25-40)
Terminal(M5)
Recommended Value 1.5-2.5(15-25)
Typical Value
■Electrical
Characteristics
Symbol
I
DRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
I
L
Item
Repetitive Peak Off-State Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Lutching Current, typ.
Conditions
at V
DRM
, Single phase, half wave, Tj=125℃
On-State Current 270A, Tj=125℃ Inst. measurement
Tj=25℃,I
T
=1A,V
D
=6V
Tj=125℃,V
D
1 2
V
DRM
I
T
=90A,
G
=100mA,
I
Tj=25℃,
D
1 2
V
DRM
G
/dt=0.1A/
V
dI
μs
Tj=125℃,V
D
2 3
V
DRM
,Exponential
wave.
Tj=25℃
Tj=25℃
Junction to case, per
1 2
Module
Junction to case, per 1 Module
Ratings
30
1.40
100/2
0.25
10
500
50
100
0.30
0.15
Unit
mA
V
mA/V
V
μs
V/
μs
mA
mA
℃/W
Rth j-c) Thermal Impedance, max.
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com