DIODE MODULE
DD110F/KD110F
UL;E76102 M)
(
Power Diode Module
DD110F
series are designed for various rectifier circuits.
DD110F
has two diode chips connected in series in 25mm (1inch) width package and the mounting
base is elctrically isolated from elements for simple heatsink construction. Wide voltage
rating up to, 1,600V is avaiable for various input voltage.
mounting base
●
Two elements in a package for simple (single and three phase) bridge
connections
●
Highly reliable glass passivated chips
●
High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
3
2- 6
20
20
92
20
●
Isolated
25
12.5
12
M5X10
31max
19.5
4.0
DD
2
2
3
1
1
80±0.2
KD
Unit:a
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV)
(
I
F (RMS)
I
FSM
It
2
(Tj=25℃
unless otherwise specified)
Item
Ratings
DD110F40
400
480
DD110F80
800
960
Conditions
Single phase, half wave, 180°
conduction, Tc:88℃
Single phase, half wave, 180°
conduction, Tc:88℃
1
cycle,
/
2
6.5
DD110F120
1200
1300
DD110F160
1600
1700
Ratings
110
172
2300/2550
26500
2500
−40
to
+125
−40
to
+125
Unit
V
V
Unit
A
A
A
A
2
S
V
℃
℃
N�½�m
(㎏f�½�B)
g
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
It
2
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
V
ISO
Tj
Tstg
Isolation Breakdown Voltage
(R.M.S)
A.C.1minute
Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting
(M5)
Terminal
(M5)
Recommended Value 1.5-2.5(15-25)
Recommended Value 1.5-2.5(15-25)
2.7(28)
2.7(28)
170
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
DRM
, single phase, half wave. Tj=125℃
Forward current 350A,Tj=25℃,Inst. measurement
Junction to case
Ratings
20
1.45
0.25
Unit
mA
V
℃/W
Rth j-c) Thermal Impedance, max.
(
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com