DIODE MODULE
DD160F
UL;E76102 M)
(
Power Diode Module
DD160F
series are designed for various rectifier circuits.
DD160F
has two diode chips connected in series in a package and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
●
Isolated mounting base
●
Two elements in a package for simple (single and three phase) bridge
connections
●
Highly reliable glass passivated chips
●
High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
42max
34max
92±0.5
12
26
26
4- (M5)
φ6
60±0.5
48±0.3
24
18
2
M8×14
R8.0
DD
80±0.3
3
2
1
5 2
Unit:a
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Ratings
DD160F40
400
480
DD160F80
800
960
(Tj=25℃
unless otherwise specified)
DD160F120
1200
1300
DD160F160
1600
1700
Unit
V
V
Symbol
I
F AV)
(
I
F (RMS)
I
FSM
It
2
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
It
2
Conditions
Single phase, half wave, 180°
conduction, Tc:87℃
Single phase, half wave, 180°
conduction, Tc:87℃
1
cycle,
/
2
Ratings
160
250
5000/5500
125000
2500
−40
to
+125
−40
to
+125
Unit
A
A
A
A
2
S
V
℃
℃
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
V
ISO
Tj
Tstg
Isolation Breakdown Voltage
(R.M.S)
A.C.1minute
Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting
(M5)
Terminal
(M8)
Recommended Value 1.5-2.5(15-25)
Recommended Value 8.8-10
(90-105)
2.7(28)
510
N�½�m
11(115)
(㎏f�½�B)
g
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
DRM
, single phase, half wave. Tj=125℃
Forward current 500A,Tj=25℃,Inst. measurement
Junction to case
Ratings
50
1.42
0.18
Unit
mA
V
℃/W
Rth j-c) Thermal Impedance, max.
(
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com