DIODE MODULE
DD200HB
UL;E76102 M）
（
Power Diode Module
DD200HB
series are designed for various rectifier circuits.
DD200HB
has two diode chips connected in series and the mounting base is electrically
isolated from elements for simple heatsink construction. Wide voltage rating up to
1,600V is available for various input voltage.
60±0.5
48±0.3
24
92±0.5
12
26
26
4- （M5）
φ6
●
Isolated
mountings base
●
Two elements in a package for simple single and three phase）
（
bridge
connections
●
Highly reliable glass passivated chips
●
High Surge current Capability
（Applications）
Various rectifiers, Bettery charagers, DC motor drives
DD
18
2
M8×14
R8.0
42max
34max
80±0.3
３
２
１
5 2
Unit：㎜
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV）
（
I
F RMS）
（
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Operating Junction Temperature
Storage Temperature
Isolation Breakdown Voltage（R.M.S.）
Mounting
Torque
Mass
Mounting
（M5）
Terminal
（M8）
A.C. 1 minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 8.8-10
（15-25）
Typical Value
Ratings
DD200HB120
1200
1350
Conditions
（Tj＝25℃
unless otherwise specified）
DD200HB160
1600
1700
Ratings
200
310
5000/5500
125000
−40
to
＋150
−40
to
＋125
2500
2.7（28）
510
Unit
V
V
Unit
A
A
A
A
2
S
℃
℃
V
Single Phase, half wave, 180℃conduction, Tc：96℃
Single Phase, half wave, 180℃conduction, Tc：96℃
1
／
2
cycle, 50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
N�½�m
（㎏f�½�B）
11（115）
g
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
RRM
. Single phase, half wave, T
j
＝150℃
Forward current 600A, T
j
＝25℃,
Inst. measurement
Junctoin to case
（Per
a half module）
Ratings
50
1.40
0.18
Unit
mA
V
℃/W
Rth j-c） Thermal Impedance, max.
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
