（F.R.D.）
DIODE MODULE
DD250HB
UL;E76102 M）
（
Power Diode Module
DD250HB
series are designed for various rectifier circuits.
DD250HB
has two diode chips connected in series in a package and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 1,600V is available for various input voltage.
mounting base
●
Two elements in a packing for simple（ single and three phase） bridge
connections
●
Highly reliable glass passivated chips
●
High surge current capability
（Applications）
Various rectifiers, Bettery chargers, DC motor drives
DD
80±0.3
60±0.5
48±0.3
24
92±0.5
12
26
26
4- （M5）
φ6
●
Isolated
18
2
M8×14
R8.0
42max
34max
３
２
１
5 2
Unit：㎜
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV）
（
I
F RMS）
（
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Operating Junction Temperature
Storage Temperature
Isolation Breakdown Voltage
（R.M.S.）
A.C. 1 minute
Mounting
Torque
Mass
Mounting
（M5）
Terminal（M8）
Recommended Value 1.5-2.5（15-25）
Ratings
DD250HB120
1200
1350
Conditions
（Tj＝25℃
unless otherwise specified）
DD250HB160
1600
1700
Ratings
250
390
5000/5500
125000
−40
to
＋150
−40
to
＋125
2500
2.7（28）
11（115）
510
Unit
V
V
Unit
A
A
A
A
2
S
℃
℃
V
N�½�m
（㎏f�½�B）
g
Single phase, half wave, 180℃conduction, Tc：94℃
Single phase, half wave, 180℃conduction, Tc：94℃
1
／
2
cycle, 50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
Recommended Value 8.8-10
（90-105）
Typical Value
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current
Forward Voltage Drop
T
j
＝150℃
at V
RRM
T
j
＝25℃,
IFM=750A, Inst. measurement
Junction case
Conditions
Ratings
Min.
Typ. Max.
50
1.45
0.14
Unit
mA
V
℃/W
Rth j-c） Thermal Impedance
（
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
