DIODE MODULE
DD(KD)60HB120/160
UL;E76102 M)
(
Power Diode Module
DD60HB
series are designed for various rectifier circuits.
DD60HB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage ratage up to,
1,600V is avaiable for various input voltage.
26MAX
93.5MAX
80
3
2
+
–
1
2- 6.5
●
Isolated
mounting base
●
Two elements in a package for simple (single and three phase) bridge
connections
●
Highly reliable glass passivated chips
●
High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
3
13
~
16.5
23
23
3M5
2
3
1
KD
21
2
1
30MAX
DD
Unit:a
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV)
(
I
F (RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Junction Temperature
Storage Temperature
Isolation Breakdown Voltage(R.M.S.)
Mounting
Torque
Mass
Mounting
(M6)
Terminal
(M5)
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
Ratings
DD60HB120
1200
1350
Conditions
(Tj=25℃
unless otherwise specified)
DD60HB160
1600
1700
Ratings
60
95
1100/1200
6000
−40
to
+150
−40
to
+125
2500
4.7(48)
2.7(28)
170
Unit
V
V
Unit
A
A
A
A
2
S
℃
℃
V
N�½�m
(㎏f�½�B)
g
Single phase, half wave, 180°
conduction, Tc:111℃
Single phase, half wave, 180°
conduction, Tc:111℃
1
cycle,
/
2
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
DRM
, single phase, half wave. Tj=150℃
Foward current 180A,Tj=25℃,Inst. measurement
Junction to case
Ratings
20
1.35
0.50
Unit
mA
V
℃/W
Rth j-c) Thermal Impedance, max.
(
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com