DFA50BA80/160
●THYRISTOR
■Maximum Ratings
（Tj＝25℃ unless otherwise specified）
Ratings
Symbol
Item
Unit
DFA50BA80
DFA50BA160
VRRM
VRSM
VDRM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak off-State Voltage
800
960
800
1600
1700
1600
V
V
V
Symbol
Item
Conditions
Singl phase half wave. 180°conduction, Tc＝85℃
Ratings
50
Unit
A
T（AV）
I
Average On-State Current
Surge On-State Current
TSM
I
Z
A
１cycle, 50/60H , peak value, non-repetitive
730/800
2660
2
2
2
I t
I t
A S
1
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
G
D
DRM
G
150
di／dt
I ＝100mA，V ＝／V ，di /dt＝0.1A/μs
A/μs
V
2
ISO
V
A.C. 1minute
2500
Tj
－40 to ＋135
－40 to ＋125
2.7（28）
2.7（28）
150
℃
Tstg
℃
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Terminal（M5） Recommended Value 1.5-2.5（15-25）
Typical Value
Mounting
Torque
N･m
（㎏f･B）
Mass
g
■Electrical Characteristics
Symbol
Item
Conditions
DRM
Ratings
Unit
mA
mA
V
DRM
I
Repetitive Peak Off-State Current,max.
Repetitive Peak Reverse Current,max.
Peak On-State Voltage,max.
Gate Trigger Current,max.
Gate Trigger Voltage,max.
D
50
50
Tj＝135℃，V ＝V
RRM
I
D
RRM
Tj＝135℃，V ＝V
TM
V
TM
1.25
70
Tj＝25℃，I ＝50A，Inst. measurement
GT
I
D
T
mA
V
V ＝6V，I ＝1A
GT
V
D
T
3
V ＝6V，I ＝1A
Critical Rate of Rise of Off-
State Voltage,min.
2
D
DRM
500
dv／dt
Tj＝125℃，V ＝／V
V/μs
3
Thermal Impedance, max.
Thermal Impedance, max.
Junction to Case
Case to Fin
0.80
0.10
Rth（j-c）
Rth（c-f）
℃/W
℃/W
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DIODE Output Current vs. Power Dissipation
DIODE Maximum Forward Characteristics
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SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
SANREX [ SANREX CORPORATION ]
