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FCA75CC50 参数 Datasheet PDF下载

FCA75CC50图片预览
型号: FCA75CC50
PDF下载: 下载PDF文件 查看货源
内容描述: MOSFET模块 [MOSFET MODULE]
分类和应用:
文件页数/大小: 21 页 / 340 K
品牌: SANREX [ SANREX CORPORATION ]
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MOSFET MODULE
FCA50CC50
FCA50CC50
is a dual power MOSFET module designed for fast swiching applications
of high voltage and current.(2 devices are serial connected with a fast recovery diode
(trr
≦100ns
)reverse
connected across each MOSFET.) The mounting base of the
module is electrically isolated from semiconductor elements for simple heatsink
construction.
I
D
=50A,
UL;E76102 M)
107.5±0.6
93±0.3
3�½�M5
78
V
DSS
=500V
Suitable for high speed switching applications.
Low ON resistance.
Wide Safe Operating Areas.
t
rr
≦100ns
fast recovery diode for free wheel.
(Applications)
UPS
(CVCF)
Motor Control, Switching Power Supply, etc.
,
D2 S1
q
S2
w
i
G2
u
S2
4
2 φ6.5
1
2
3
56
23
23
TAB=110
(T0.5)
30max
NAME PLATE
e
D1
y
S1
t
G1
Unit:
A
■Maximum
Ratings
Symbol
V
DSS
V
GSS
I
D
I
DP
-I
D
P
T
Tj
Tstg
V
ISO
Item
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Source Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Isolation Voltage(R.M.S.)
Mounting
Torque
Mass
Mounting
(M6)
Terminal(M5)
A.C. 1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
Typical Value
Tc=25℃
DC
Pulse
Duty 55%
Conditions
(Tj=25℃ unless otherwise specified)
Ratings
FCA50CC50
500
±20
50
100
50
330
−40 to +150
−40 to +125
2500
4.7(48)
2.7(28)
240
Unit
V
V
A
A
W
V
N�½�m
(kgf�½�B)
g
■Electrical
Charactistics
Symbol
I
GSS
I
DSS
(BR)
V
DSS
(th)
V
GS
(on)
R
DS
(on)
V
DS
(Tj=25℃ unless otherwise specified)
Conditions
V
GS
=±20V,V
DS
=0V
V
GS
=0V,V
DS
=500V
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=10mA
I
D
=25A,V
GS
=15V
I
D
=25A,V
GS
=15V
V
DS
=10V,I
D
=25A
V
GS
=0V,V
DS
=25V,f=1.0MHz
V
GS
=0V,V
DS
=25V,f=1.0MHz
V
GS
=0V,V
DS
=25V,f=1.0MHz
60
V
DD
=300V,V
GS
=15V
I
D
=25A,R
G
=5Ω
I
S
=25A,V
GS
=0V
I
S
=25A,V
GS
=−5V,di/dt=100A/
μs
MOSFET
Diode
80
100
520
140
2.0
100
0.38
1.67
V
ns
℃/W
ns
30
10000
1900
750
500
1.0
5.0
140
3.5
Ratings
Min.
Typ.
Max.
±1.0
1.0
Unit
μA
mA
V
V
V
S
pF
pF
pF
Item
Gate Leakage Current
Zero Gate Voltage Drain Current
Darin-Source Breakdown Voltage
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Switching
Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
gfs
Ciss
Coss
Crss
td on)
tr
td off)
tf
V
SDS
trr
Rth j-c) Thermal Resistance
1
31max
4
35±0.6
17