MOSFET MODULE
FBA50CA45/50
FBA50CA45/50
is a dual power MOSFET module designed for fast swiching
applications of high voltage and current.
(2
devices are serial connected.) The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
V
DSS
=500V
●
Suitable for high speed switching applications.
●
Low ON resistance.
●
Wide Safe Operating Areas.
(Applications)
UPS
(CVCF)
Motor Control, Switching Power Supply, etc.
,
30max
i
G2
u
S2
UL;E76102 M)
(
●
I
D
=50A,
107.5±0.6
93±0.3
4-M5
4 17 4
35±0.6
1
2
3
4
78
56
2-
φ6.5
19
19
19
TAB=110
(T0.5)
NAME PLATE
D2 S1
q
S2 D1
w e
S1
r
y
S1
t
G1
Unit:
A
■Maximum
Ratings
Symbol
V
DSS
V
GSS
I
D
I
DP
-I
D
P
T
Tj
Tstg
V
ISO
Item
Drain-Source Voltage
Gate-Source Voltage
Drain
Current
Source Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Isolation Voltage(R.M.S.)
Mounting
Torque
Mass
Mounting
(M6)
Terminal(M5)
A.C. 1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
Typical Value
Tc=25℃
D.C.
Pulse
Conditions
(Tj=25℃ unless otherwise specified)
Ratings
FBA50CA45 FBA50CA50
450
±20
50
100
50
320
150
−40 to +125
2500
4.7(48)
2.7(28)
220
500
Unit
V
V
A
A
W
℃
℃
V
N�½�m
(kgf�½�B)
g
■Electrical
Characteristics
Symbol
I
GSS
I
DSS
(BR)
V
DSS
(th)
V
GS
(on)
R
DS
(on)
V
DS
(Tj=25℃ unless otherwise specified)
Conditions
V
GS
=±20V,V
DS
=0V
V
GS
=0V,V
DS
=500V
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=10mA
I
D
=25A,V
GS
=15V
I
D
=25A,V
GS
=15V
V
DS
=10V,I
D
=25A
V
GS
=0V,V
DS
=25V,f=1.0MHz
V
GS
=0V,V
DS
=25V,f=1.0MHz
V
GS
=0V,V
DS
=25V,f=1.0MHz
60
R
L
=12Ω,R
GS
=50Ω,V
GS
=15V
I
D
=25A,R
G
=5Ω
ーI
D
=25A,V
GS
=0V
ーI
D
=25A,V
GS
=0V,di/dt=100A/μs
700
0.39
60
650
130
1.5
V
ns
℃/W
ns
30
10000
1900
750
450
500
1.0
5.0
120
3.0
Ratings
Min.
Typ.
Max.
±1.0
1.0
Unit
μA
mA
V
V
mΩ
V
S
pF
pF
pF
Item
Gate Leakage Current
Zero Gate Voltage Drain Current
FBA50CA45
Drain-Source
Breakdown Voltage
FBA50CA50
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Switching
Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
gfs
Ciss
Coss
Crss
td on)
(
tr
td off)
(
tf
V
SDS
trr
Rth j-c) Thermal Resistance
(
7
31max