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FSD20A30 参数 Datasheet PDF下载

FSD20A30图片预览
型号: FSD20A30
PDF下载: 下载PDF文件 查看货源
内容描述: 晶闸管模块(单相桥式) [THYRISTOR MODULE (SINGLE PHASE BRIDGE TYPE)]
分类和应用: 栅极触发装置可控硅整流器
文件页数/大小: 2 页 / 111 K
品牌: SANREX [ SANREX CORPORATION ]
 浏览型号FSD20A30的Datasheet PDF文件第2页  
THYRISTOR MODULE
(SINGLE
PHASE BRIDGE TYPE)
FSD20A30/60
UL:E76102 M)
FSD20A
is a single phase bridge module consist of thyristors and diodes
I
D
=20A,
5.2
V
RRM
=600V
Easy Construction
Highly reliable glass passivated chips
(Applications)
Rectification (Bridge)
Motor Drive
22.1±0.5
14.6±0.3
33.0
62.0
48.0
26.1±0.5
φ5.2×6.2
AC1
AC2
G1
G2
250TAB
(t=0.8)
AC1
AC2
11.6
2.6
G1
G2
22.5max
+
-
Unit:
A
■Maximum
Ratings
Symbol
V
RRM
V
DRM
Symbol
IT
(AV)
I
TSM
I
2
t
P
GM
(AV)
P
G
(Tj=25℃
unless otherwise specified)
Item
Ratings
FSD20A30
300
300
Conditions
Single phase, half wave, 180°
conduction, Tc:65℃
1
cycle,
2
FSD20A60
600
600
Ratings
20
180
/
200
165
10
1
3
10
5
Unit
V
V
Unit
A
A
A
2
S
W
W
A
V
V
A
/
μs
V
N�½��½�
(㎏f�½�B)
g
Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Item
Average On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
Mounting Torque(M5)
Mass
50Hz/60Hz, peak value, non-repetitive
I
FGM
V
FGM
V
RGM
di/dt
V
ISO
Tj
Tstg
I
G
=100mA,
Tj=25℃,
D
1 2
V
DRM
G
/
dt=1A
/
V
dI
μs
A.C.1minute
100
2500
−30
to
+125
−30
to
+125
Recommended Value 1.5-2.5(15-25)
2.7(28)
66
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
/V
GT
V
GD
tgt
dv/dt
I
H
Item
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
Conditions
at V
DRM
, single phase, half wave, Tj=125℃
at V
DRM
, single phase, half wave, Tj=125℃
On-State Current 30A, Tj=25℃ Inst. measurement
Tj=25℃,I
T
=1A,V
D
=6V
Tj=125℃,V
D
1 2
V
DRM
I
T
=10A,
G
=100mA,
I
Tj=25℃,
D
1 2
V
DRM
G
/
dt=1A
/
V
dI
μs
Tj=125℃, V
D
2 3
V
DRM
, Exponential wave.
Tj=25℃
Junction to case
Ratings
5
5
1.5
40
/
1.2
0.2
10
50
30
1.0
Unit
mA
mA
V
mA
/
V
V
μs
V
/
μs
mA
/
W
Rth j-c) Thermal Impedance, max.
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com