IGBT MODULE
GAE75BA60
SanRex
IGBT Module
GAE75BA60
is designed for high speed, high current switching
applications. This Module is electrically isolated and contains IGBT connected with
clamp diode in series, soft recovery diode (trr=0.1
s)
reverse connected across IGBT.
I
C
75A V
CES
600V
V
CES sat
2.4V Typ
t f 0.10 s Typ
Soft recovery diode
Applications
Brake for motor control (VVVF)
UL;E76102 M
Unit mm
Maximum Ratings
Symbol
V
CES
V
GES
Ic
I
CP
Ic
P
T
Tj
Tstg
V
ISO
Item
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector
Current
DC
Pulse
ms
Reverse Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Isolation Voltage R.M.S.
Mounting
Torque
Mass
Mounting
Terminal
6
5
A.C. minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Typical Value
Tc 25
Conditions
with gate terminal shorted to emitter
with collector shorted to emitter
Unless otherwise Tj 25
Ratings
GAE75BA60
600
20
75
150
75
315
150
40
125
2500
4.7 48
2.7 28
210
V
V
V
A
A
Unit
W
N m
kgf cm
g
Electrical Characteristics
Symbol
I
GES
I
CES
V
BR CES
th
sat
Item
Gate Leakage Current
Collector Cut-Off Current
Collector-Emitter Breakdown Voltage
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Rise Time
Switching
Time
Turn-on Delay Time
Fall Time
Turn-off Delay Time
Emitter-Collector Voltage
Reverse Recovery Time
Thermal Resistance
Forward Voltage Drop
Reverse Recovery Time
Thermal Impedance
V
GE
Conditions
20V V
CE
0V
mA
Ratings
Min.
Typ.
Max.
500
1.00
600
3.0
2.40
4.00
0.10
0.20
0.10
0.40
1.80
0.10
7.00
2.80
7.50
0.20
0.40
0.20
0.80
2.80
0.15
0.40
0.55
1.80
0.10
2.80
0.15
0.55
Unit
nA
mA
V
V
V
nF
V
CE
600V V
GE
0V
V
GE
0V Ic
V
CE
10V Ic 7.5mA
Ic 75A V
GE
15V
V
CE
10V V
GE
0V f 1MHz
Ic 75A V
GE
15V/ 5V
Vcc 300V R
G
8
Ic 75A V
GE
0V
Ic 75A V
GE
IGBT-Case
Diode-Case
IF 75A, Clamp Diode
IF 75A di F/ dt
Clamp Diode
150A/ s, Clamp Diode
10V di
/
dt 150A/ s
V
GE
V
CE
Cies
tr
td on
tf
td off
V
ECS
trr
Rth j-c
V
FM
trr
Rth j-c
s
V
s
/W
V
s
/W
40
SANREX [ SANREX CORPORATION ]
